IRG4PC30U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC packageFeatures C UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
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ISO7231MDWRG4 ,Triple Channel, 2/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features 2 Applications1• 25 and 150-Mbps Signaling Rate Options • Industrial Fieldbus– Low Channel ..
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ISO7240ADWR ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125FEATURES• 4000-V Isolation, 560-V V APPLICATIONSpeak peak IORM• Industrial Fieldbus– UL 1577 , IEC ..
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IRG4PC30U
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
Internat onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD 91461E
llRG4PC30U
Ultra Fast Speed IGBT
Features
. UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher eNciency than
Generation 3
. Industry standard TO-247AC package
n-channel
VCES = 600V
VCE(on) typ. = 1 .95V
@VGE =15V, Ic = 12A
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 23
lo @ Tc = 100°C Continuous Collector Current 12 A
ICM Pulsed Collector Current co 92
u, Clamped Inductive Load Current © 92
N/ss Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy s 10 ml
PD @ Tc = 25°C Maximum Power Dissipation 100 W
PD @ Tc = 100°C Maximum Power Dissipation 42
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 1 .2
Ras Case-to-Sink, Flat, Greased Surface 0.24 - "CM/
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
12/30/00
IRGdPC30U International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C l/ss = 0V, k: = 1.0mA
- 1.95 2.1 Ic=12A VGE=15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.52 - V Ic = 23A See Fig.2, 5
- 2.09 - lc-- 12A,To= 150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mvrc VCE = VGE, Ic = 250pA
gfe Forward Transconductance (D 3.1 8.6 - S VCE = 100 V, k: = 12A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, I/cs = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25''C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-to-Emi) Leakage Current - - i100 nA VGE = EBN
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 50 75 lc = 12A
Qge Gate - Emitter Charge (turn-on) - 8.1 12 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 18 27 Vas = 15V
tdwn) Turn-On Delay Time - 17 -
tr RiseTime - 9.6 - ns TJ=25°C
td(oti) Turn-Off Delay Time - 78 120 lc = 12A, Vcc = 480V
tf FalITime - 97 150 VGE = 15V, RG = 239
Er,, Turn-On Switching Loss - 0.16 - Energy losses include "tail"
' Turn-Off Switching Loss - 0.20 - ml See Fig. 10, 11, 13, 14
EB Total Switching Loss - 0.36 0.50
tu(on) Turn-On Delay Time - 20 - Tu = 150°C,
tr RiseTime - 13 - ns k: = 12A, Vcc = 480V
tam) Turn-Off Delay Time - 180 - VGE = 15V, Rs = 239
tr FaIITime - 140 - Energy losses include "tail"
Ets Total Switching Loss - 0.73 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = 0V
Cas Output Capacitance - 73 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f=1.0MHz
Notes:
C) Repetitive rating; VGE= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs), VGE= 20V, L = 10pH, Rs = 23f2, © Pulse width f 80ps; duty factor 3 0.1%.
(See fig. 13a) © Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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