IRG4PC30S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeatures Standard: Optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4PC30U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC packageFeatures C UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4PC30UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4PC30W ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC packageFeatures C Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor corre ..
IRG4PC30WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC packageapplications Industry-benchmark switching losses improveV = 2.70VCE(on) max.G efficiency of all p ..
IRG4PC40F ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC packageFeatures C Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
ISO7231MDW ,Triple Channel, 2/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
ISO7231MDWRG4 ,Triple Channel, 2/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features 2 Applications1• 25 and 150-Mbps Signaling Rate Options • Industrial Fieldbus– Low Channel ..
ISO7240A ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125maximum ratings may cause permanent damage to the device. These are stress ratingsonly and function ..
ISO7240ADW ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125These devices have limited built-in ESD protection. The leads should be shorted together or the dev ..
ISO7240ADWR ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125FEATURES• 4000-V Isolation, 560-V V APPLICATIONSpeak peak IORM• Industrial Fieldbus– UL 1577 , IEC ..
ISO7240ADWRG4 ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125ELECTRICAL CHARACTERISTICS: V and V at 5-V OPERATIONCC1 CC2, over recommended operating conditions ..
IRG4PC30S
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
International
TGiR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91586A
IRG4PC30S
Standard Speed IGBT
Features
. Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
I Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-247AC package
n-channel
VCES = 600V
VCE(on) typ. = 1.4V
@VGE =15V,lc = 18A
Benefits
. Generation 4 IGBTs offer highest efficiency available
- IGBTs optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 34
lc @ Tc = 100°C Continuous Collector Current 18 A
ICM Pulsed Collector Current C) 68
ILM Clamped Inductive Load Current © 68
VGE Gate-to-Emitter Voltage i 20 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
Pro @ Tc = 25°C Maximum Power Dissipation 100 W
PD © Tc = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to + 150
Tsre Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .2
Recs Case-to-Sink, Flat, Greased Surface O.24 - 'C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
4/15/2000
International
IRG4PC30S TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, k: = 1.0A
AVBFOCESIATJ Temperature Coeff. of Breakdown Voltage - 0.75 - V/°C VGE = 0V, Ic = 1.0mA
- 1.40 1.6 Ic= 18A VGE=15V
VCE(0N) Collector-to-Emile Saturation Voltage - 1.84 - V Ic = 34A See Fig.2, 5
- 1.45 - |c=18A,TJ=150°C
VGEm Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/"C VCE = VGE, k: = 250pA
We Fowvard Transconductance s 6.0 11 - S VCE = 100V, k: = 18A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
IGES Gate-to-Emi) Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 50 75 lc = 18A
099 Gate - Emitter Charge (turn-on) - 7.3 11 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 17 26 VGE = 15V
tdwn) Turn-On Delay Time - 22 -
tr Rise Time - 18 - ns Tu = 25°C
tdiott) Turn-Off Delay Time - 540 810 lc = 18A, Vcc = 480V
t, Fall Time - 390 590 Van; = 15V, Rs = 23n
Eon Turn-On Switching Loss - 0.26 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 3.45 - mJ See Fig. 9, 10, 14
Ets Total Switching Loss - 3.71 5.6
tdwn) Turn-On Delay Time - 21 - Tu = 150°C,
tr Rise Time - 19 - ns Ic = 18A, Vcc = 480V
td(off) Turn-Off Delay Time - 790 - VGE = 15V, Rs = 23n
tf Fall Time - 760 - Energy losses include "tail"
Ets Total Switching Loss - 6.55 - mJ See Fig. 11, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = 0V
Coes Output Capacitance - 72 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 13 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See fig. 13b)
© Vcc = 80%(VcEs),VGE = 20V, L = 10pH, Rs = 23O, © Pulse width f 80ps,' duty factor S 0.1%.
(See fig. 13a) G) Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
2
