IRG4PC30K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC packageFeaturesC High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (s ..
IRG4PC30KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4PC30S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeatures Standard: Optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4PC30U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC packageFeatures C UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4PC30UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4PC30W ,600V Warp 60-150 kHz Discrete IGBT in a TO-247AC packageFeatures C Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor corre ..
ISO7231CDWR ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list........ 1peak• Added t Part-to-part skew....... 10sk(pp)• Added t Part-to-part skew.. ..
ISO7231CDWRG4 ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features 2 Applications1• 25 and 150-Mbps Signaling Rate Options • Industrial Fieldbus– Low Channel ..
ISO7231M ,Triple Channel, 2/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Electrical Characteristics: V and V at 3.3 V... 9CC1 CC213.1 Related Documentation..... 257.9 Power ..
ISO7231MDW ,Triple Channel, 2/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
ISO7231MDWRG4 ,Triple Channel, 2/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features 2 Applications1• 25 and 150-Mbps Signaling Rate Options • Industrial Fieldbus– Low Channel ..
ISO7240A ,Quad Channel, 4/0, 1Mbps, Digital Isolator 16-SOIC -40 to 125maximum ratings may cause permanent damage to the device. These are stress ratingsonly and function ..
IRG4PC30K
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91588A
IRG4PC30K
Short Circuit Rated
UItraFast IGBT
Features
. High short circuit rating optimized for motor control,
tsc=10ps, @360V VCE (start), T J = 125°C, VCES = 600V
VGE = 15V
. Combines low conduction losses with high VCE(on) typ. = 2.21V
switching speed
. Latest eneration desi n provides ti hter parameter - -
21l'r'ii',iu'til',11 and 'dgr,'r'1lrf2ireonvC' 'i2 previous E @VGE - 15V, lc _ 16A
generations n-chan nel
Benefits
. As a Freewheeling Diode we recommend our l
HEXFREDTM ultrafast, ultrasoft recovery diodes for tie
minimum EMI / Noise and switching losses in the t)itsil,
Diode and IGBT Fr-'"."..".,
. Latest generation 4 IGBTs offer highest power
density motor controls possible
. This part replaces the IRGPC30K and IRGPC3OM
devices
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 28
lc @ Tc = 100°C Continuous Collector Current 16 A
ICM Pulsed Collector Current OD 58
ILM Clamped Inductive Load Current © 58
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emitter Voltage A20 V
EARV Reverse Voltage Avalanche Energy © 260 m]
Po @ Tc = 25°C Maximum Power Dissipation 100 W
Po @ Tc = 100°C Maximum Power Dissipation 42
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
R9JC Junction-to-Case - 1.2
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
4/15/2000
International
IRG4PC30K IEBR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, k: = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.54 - Vl°C VGE = 0V, Ic = 1.0mA
- 2.21 - k: = 14A
VCE(0N) Collector-to-Emi) Saturation Voltage - 2.21 2.7 V k: = 16A VGE - 15V
- 2.88 - k: = 28A See Fig.2, 5
- 2.36 - Ic= 16A,To= 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mVPC VCE = VGE, lc = 250PA
gfe Forward Transconductance s 5.4 8.1 - S VCE = 100V, Ic = 16A
- - 250 VGE = 0V, VCE = 600V
Ices Zero Gate Voltage Collector Current - - 2.0 pA VGE = 0V, VCE = 10V, To = 25°C
- - 1100 VGE = 0V, VCE = 600V, To = 150°C
leg Gate-to-Emitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 67 100 lc = 16A
095 Gate - Emitter Charge (turn-on) - 11 16 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 25 37 VGE = 15V
tdwn) Turn-On Delay Time - 26 -
tr Rise Time - 28 - ns Tu = 25°C
td(ott) Turn-Off Delay Time - 130 200 k: = 16A, Vcc = 480V
tt Fall Time - 120 170 VGE = 15V, Rs = 23n
Eon Turn-On Switching Loss - 0.36 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.51 - mJ See Fig. 9,10,14
Ets Total Switching Loss - 0.87 1.3
tsc Short Circuit Withstand Time 10 - - us Vcc = 400V, To = 125°C
VGE = 15V, Rs = 23n , Von; < 500V
tum”) Turn-On Delay Time - 25 - To = 150°C,
tr Rise Time - 29 - lc = 16A, Vcc = 480V
tam Turn-Off Delay Time - 190 - ns VGE = 15V, Rs = 23n
tr Fall Time - 190 - Energy losses include "tail"
EU Total Switching Loss - 1.2 - mi See Fig. 11,14
El,, Turn-On Switching Loss - 0.26 - To = 25°C, VGE = 15V, Rs = 23n
E01 Turn-Off Switching Loss - 0.36 - k: = 14A, Vcc = 480V
Eis Total Switching Loss - 0.62 - Energy losses include "tail"
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 920 - VGE = 0V
G, Output Capacitance - 110 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 27 - f = 1.0MHz
Details of note (D through s are on the last page
2
