IRG4PC30FD ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packageFeatures Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4PC30FPBF ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
IRG4PC30K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC packageFeaturesC High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (s ..
IRG4PC30KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4PC30S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeatures Standard: Optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4PC30U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC packageFeatures C UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
ISO7231C ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
ISO7231CDW ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Electrical Characteristics: V and V at 3.3 V... 9CC1 CC213.1 Related Documentation..... 257.9 Power ..
ISO7231CDWR ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list........ 1peak• Added t Part-to-part skew....... 10sk(pp)• Added t Part-to-part skew.. ..
ISO7231CDWRG4 ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features 2 Applications1• 25 and 150-Mbps Signaling Rate Options • Industrial Fieldbus– Low Channel ..
ISO7231M ,Triple Channel, 2/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Electrical Characteristics: V and V at 3.3 V... 9CC1 CC213.1 Related Documentation..... 257.9 Power ..
ISO7231MDW ,Triple Channel, 2/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
IRG4PC30FD
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
PD 91460B
International
TOR Rectifier IRG4PC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C
. Fast: Optimized for medium operating VCES = 600V
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. Generation 4 IGBT design provides tighter VCE(on)typ. = 1.59V
parameter distribution and higher efficiency than G
Generation 3 E @VGE = 15V, lc = 17A
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n I h a n n el
bridge configurations
I Industry standard TO-247AC package
Benefits
. Generation -4 IGBT's offer highest efficiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 31
IC @ Tc = 100°C Continuous Collector Current 17
ICM Pulsed Collector Current C) 120 A
u, Clamped Inductive Load Current © 120
IF @ To = 100''C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emitter Voltage , 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 100
Po @ Tc = 100°C Maximum Power Dissipation 42
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - IGBT - 1.2
ROJC Junction-to-Case - Diode - 2.5
Recs Case-to-Sink, Flat, Greased Surface 0.24 - 'C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
12/30/00
International
IRG4PC30FD TOR Rectifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
V(BR)CE5 Collector-to-Emitter Breakdown Voltages 600 - - V VGE = 0V, k: = 250PA
AV(BR)CEslATJ Temperature Coeff. of Breakdown Voltage - 0.69 Vl°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.59 1.8 k: = 17A VGE = 15V
- 1.99 - V l: = 31A See Fig. 2, 5
- 1.70 - Ic = 17A, Tu = 150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, lc = 250uA
gre Forward Transconductance © 6.1 10 - S VCE = 100V, Ic = 17A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 2500 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V Ic = 12A See Fig. 13
- 1.3 1.6 lo =12A,Tu =150°C
IGEs Gate-to-Emitter Leakage Current - - A100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 51 77 Ic = 17A
Qge Gate - Emitter Charge (turn-on) - 7.9 12 n0 Vcc = 400V See Fig. 8
Qqc Gate - Collector Charge (turn-on) - 19 28 VGE = 15V
td(on) Turn-On Delay Time - 42 - TJ = 25°C
t, Rise Time - 26 - ns Ic = 17A, Vcc = 480V
tam) Turn-Off Delay Time - 230 350 VGE = 15V, RG = 239
tr Fall Time - 160 230 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.63 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 1.39 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 2.02 3.9
td(on) Turn-On Delay Time - 42 TJ = 150°C, See Fig. 9, 10, 11, 18
t, Rise Time - 27 - ns k: = 17A, Vcc = 480V
tam) Turn-Off Delay Time - 310 - VGE = 15V, Rs = 23n
tr Fall Time - 310 - Energy losses include "tail" and
Ets Total Switching Loss - 3.2 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = 0V
Coes Output Capacitance - 74 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns To = 25°C See Fig.
- 80 120 To = 125°C 14 IF = 12A
In Diode Peak Reverse Recovery Current - 3.5 6.0 A To = 25''C See Fig.
- 5.6 10 TJ =125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 80 180 n C To = 25°C See Fig.
- 220 600 To = 125''C 16 di/dt 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 180 - Alps To = 25°C See Fig.
During tr, - 120 - To = 125°C 17
2
