IRG4PC30F ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC packageFeatures C Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
IRG4PC30FD ,600V Fast 1-8 kHz Copack IGBT in a TO-247AC packageFeatures Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4PC30FPBF ,600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
IRG4PC30K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC packageFeaturesC High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (s ..
IRG4PC30KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4PC30S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeatures Standard: Optimized for minimum saturationV = 600VCES voltage and low operating freque ..
ISO7231ADWRG4 ,Triple Channel, 2/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125maximum ratings may cause permanent damage to the device. These are stress ratingsonly and function ..
ISO7231C ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
ISO7231CDW ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Electrical Characteristics: V and V at 3.3 V... 9CC1 CC213.1 Related Documentation..... 257.9 Power ..
ISO7231CDWR ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list........ 1peak• Added t Part-to-part skew....... 10sk(pp)• Added t Part-to-part skew.. ..
ISO7231CDWRG4 ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features 2 Applications1• 25 and 150-Mbps Signaling Rate Options • Industrial Fieldbus– Low Channel ..
ISO7231M ,Triple Channel, 2/1, 150Mbps, Digital Isolator 16-SOIC -40 to 125Electrical Characteristics: V and V at 3.3 V... 9CC1 CC213.1 Related Documentation..... 257.9 Power ..
IRG4PC30F-IRG4PC30FPBF
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
Internat onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD 914598
IRCMPC30F
Fast Speed IGBT
Features
. Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. Generation 4 IGBT design provides tighter
parameter distribution and higher eNciency than
Generation 3
. Industry standard TO-247AC package
VCEs=600V
VCE(on) typ. = 1.59V
E @VGE =15V,lc = 17A
n-channel
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 31
lo @ Tc = 100°C Continuous Collector Current 17 A
ICM Pulsed Collector Current C) 120
ILM Clamped Inductive Load Current © 120
N/ss Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
PD @ Tc = 25°C Maximum Power Dissipation 100 W
PD @ Tc = 100°C Maximum Power Dissipation 42
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .2
Ras Case-to-Sink, Flat, Greased Surface 0.24 - "CM/
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
1229/l00
IRG4PC30F
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V I/ss = 0V, k: = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.69 - Vl°C VGE = 0V, Ic = 1.0mA
- 1.59 1.8 lc= 17A VGE=15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 1.99 - V Ic = 31A See Fig.2, 5
- 1.7 - lc=17A,To=1500C
VGE(m) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
gfe Fon/vard Transconductance s 6.1 10 - S VCE = 100V, k: = 17A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, TJ = 150°C
legs Gate-to-Emilie, Leakage Current - - i100 nA VGE = EBN
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 51 77 k: = 17A
Qge Gate - Emitter Charge (turn-on) - 7.9 12 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 19 28 VGE = 15V
tdion) Turn-On Delay Time - 21 -
tr Rise Time - 15 - ns TJ = 25°C
tam) Turn-Off Delay Time - 200 300 lc = 17A, Vcc = 480V
tf Fall Time - 180 270 VGE = 15V, RG = 239
Eon Turn-On Switching Loss - 0.23 - Energy losses include "tail"
Es, Turn-Off Switching Loss - 1.18 - mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss - 1.41 2.0
td(on) Turn-On Delay Time - 20 - Tu = 150°C,
tr Rise Time - 16 - ns k: = 17A, Vcc = 480V
td(off) Turn-Off Delay Time - 290 - VGE = 15V, Rs = 239
tr Fall Time - 350 - Energy losses include "tail"
Ets Total Switching Loss - 2.5 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = 0V
Coes Output Capacitance - 74 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Vcc = 80%(VCEs), l/GE = 20V, L = 10pH, Rs = 239,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width 3 80ps; duty factor s: 0.1%.
s Pulse width 5.0ps, single shot.
