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ISO7231ADW ,Triple Channel, 2/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125FEATURES• 1Mbps Signaling Rate• High Electromagnetic Immunity(See Application note SLLA181)– Low Ch ..
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ISO7231ADWG4 ,Triple Channel, 2/1, 1Mbps, Digital Isolator 16-SOIC -40 to 125MAXIMUM RATINGSVALUE UNIT(2)V Supply voltage , V , V–0.5 to 6 VCC CC1 CC2V Voltage at IN, OUT, EN–0 ..
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ISO7231C ,Triple Channel, 2/1, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
IRG4IBC30W
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
International
TOR Rectifier
PD 91791A
IRG4lBC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
. 2.5kV, 60s insulation voltage ©
. Industry-benchmark switching losses improve
efficiency of all power supply topologies
. 50% reduction of Eoff parameter
. Low IGBT conduction losses
. Latest-generation IGBT design and construction offers
n-channel
VCES = 600V
E @VGE=15V,lc=12A
tighter parameters distribution, exceptional reliability
. Industry standard Isolated TO-220 FullpakTM
outline
Benefits
. Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz '
("hard switched" mode) tE'.'.'.':,.;......
. Of particular benefit to single-ended converters and 'ities,
boost PFC topologies 150W and higher
. Low conduction losses and minimal minority-carrier "iii)):)'):
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz) TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
Vces Collector-to-Emitter Breakdown Voltage 600 V
Ic @ To = 25°C Continuous Collector Current 17
lc © Tc = 100°C Continuous Collector Current 8.4 A
ICM Pulsed Collector Current co 92
ILM Clamped Inductive Load Current © 92
VGE Gate-to-Emitter Voltage 1 20 V
EARV Reverse Voltage Avalanche Energy © 180 mJ
PD @ Tc = 25''C Maximum Power Dissipation 45 W
PD @ Tc = 100°C Maximum Power Dissipation 18
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - IGBT - 2.8
ReJA Junction-to-Ambient, typical socket mount - 65 "C/W
Wt Weight 2.0 (0.07) - g (oz)
1
12/30/00
|RG4|BC30W
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmcgs Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, k: = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.34 - V/°C VGE = 0V, Ic = 1.0mA
- 2.1 2.7 Ic = 12A VGE = 15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.45 - V lc = 23A See Fig.2, 5
- 1.95 - Ic=12A,TJ=150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGEGhyATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, k: = 250pA
gfe Forward Transconductance S 11 16 - S VCE = 100 V, Ic =12A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (un
less otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 51 76 Ic = 12A
Qge Gate - Emitter Charge (turn-on) - 7.6 11 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 18 27 Vas = 15V
tdwn) Turn-On Delay Time - 25 -
tr Rise Time - 16 - ns Tu = 25°C
td(off) Turn-Off Delay Time - 99 150 IC = 12A, Vcc = 480V
tr Fall Time - 67 100 VGE = 15V, RG = 23n
Eon Turn-On Switching Loss - 0.13 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.13 - mi See Fig. 9, 10, 13, 14
Ets Total Switching Loss - 0.26 0.35
tu(on) Turn-On Delay Time - 24 - Tu = 150°C,
tr Rise Time - 17 - ns IC = 12A, Vcc = 480V
td(off) Turn-Off Delay Time - 150 - VGE = 15V, Rs = 239
tr Fall Time - 150 - Energy losses include "tail"
Ets Total Switching Loss - 0.55 - mJ See Fig. 11,13, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 980 - VGE = 0V
Goes Output Capacitance - 71 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 18 - f = 1.0MHz
Notes:
OD Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
© Vcc = 80%(VcEs),VsE = 20V, L = 10pH, Re = 23n,
(See fig. 13a)
co Repetitive rating; pulse width limited by maximum
junction temperature.
co Pulse width 5 80ps; duty factor f 0.1%.
G) Pulse width 5.0ps, single shot.
© t = 60s, f= 60Hz
