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IRG4IBC30S
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220 FullPak package
Inferno
tional
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Standard: Optimized for minimum saturation
voltage and low operating freqencies (<1 kHz)
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
. Industry standard TO-220 Full-Pak
Benefits
PD - 94293
1RG4IBC30S
VCES = 600V
VCE(on) typ. = 1.4V
E @VGE =15V,lc = 18A
N-channel
. Generation 4 IGBTs offer highest etMiencies available
. IGBTs optimized for specific application conditions
. Designed to be a "drop-in" replacement for equivalent
industry -standard Generation 3 IR IGBTs
Absolute Maximum Ratings
TO-220 Full-Pak
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 23.5
Ic @ Tc = 100°C Continuous Collector Current 13.0 A
ICM Pulsed Collector Current (D 68
ILM Clamped Inductive Load Current © 68
VCE Gate-to-Emitter Voltage , 20 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
PD @ Tc = 25°C Maximum Power Dissipation 45 W
PD @ Tc = 100°C Maximum Power Dissipation 18
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 2.8 OCIW
ReJA Junction-to-Ambient, typical socket mount - 65
Wt Weight 2.1 (0.075) - g (oz)
1
08/02/01
IRG4IBC30S
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltage 600 - - V VGE = 0V, k: = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CE$IATJ Temperature Coeff. of Breakdown Voltage - 0.75 - V/°C VGE = 0V, Ic = 1.0mA
- 1.40 1.6 Ic=18A VGE=15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 1.84 - V Io = 34A See Fig.2, 5
- 1.45 - k)=18A,To=150''C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, k: = 250PA
We Forward Transconductance © 6.0 11 - S VCE = 100 V, lc = 18A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-toEmitter Leakage Current - - i100 nA VGE = ENN
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 50 75 lc = 18A
Qge Gate - Emitter Charge (turn-on) - 7.3 11 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 17 26 Vas = 15V
tdwn) Turn-On Delay Time - 22 -
tr Rise Time - 18 - ns T: = 25°C
tdiott) Turn-Off Delay Time - 540 810 10 = 18A, Vcc = 480V
tf Fall Time - 390 590 VGE = 15V, RG = 239
Eon Turn-On Switching Loss - 0.26 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 3.45 - mJ See Fig. 9, 10, 14
Ets Total Switching Loss - 3.71 5.6
td(on) Turn-On Delay Time - 21 - Tu = 150°C,
tr Rise Time - 19 - ns lc = 18A, Vcc = 480V
tum) Turn-Off Delay Time - 790 - VGE = 15V, Rs = 23n
tr Fall Time - 760 - Energy losses include "tail"
Ets Total Switching Loss - 6.55 - mJ See Fig. 10, 11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = 0V
Coes Output Capacitance - 72 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 19 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by (D Pulse width S 80ps; duty factor f 0.1%.
max. junction temperature. (See Fig. 13b)
Vcc = 80%(VcEs), Vas = 20V, L = 10pH, RG = 23n,
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
s Pulse width 5.0ps, single shot.
