IRG4IBC30FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak packageFeatures• Very Low 1.59V votage dropV = 600VCES• 2.5kV, 60s insulation voltage
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IRG4IBC30FD
600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD- 91751A
IRG4ll3C30FD
Fast CoPack IGBT
Features
. Very Low 1.59V votage drop
. 2.5kV, 60s insulation voltage S
. 4.8 mm creapage distance to heatsink
. Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. IGBT co-packaged with HEXFREDTM ultrafast,
ultrasofl recovery antiparallel diodes
VCES = 600V
E @VGE = 15V, k: = 17A
n-channel
. Tighter parameter distribution
. Industry standard Isolated TO-220 FullpakTM
outline
Benefits F, 1'tCC,Cik..l-
. Simplified assembly
. Highest efMiency and power density ryEi'eek5
. HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 20.3
k; @ Tc = 100°C Continuous Collector Current 11
ICM Pulsed Collector Current C) 120 A
ILM Clamped Inductive Load Current © 120
IF @ Tc = 100°C Diode Continuous Forward Current 8.5
IFM Diode Maximum Forward Current 120
Visol RMS Isolation Voltage, Terminal to Case© 2500 V
VGE Gate-to-Emitter Voltage * 20
Pro @ Tc = 25°C Maximum Power Dissipation 45 W
Po @ Tc = 100°C Maximum Power Dissipation 18
To Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - IGBT - 2.8
ReJC Junction-to-Case - Diode - 4.1 °C/W
RNA Junction-to-Ambient, typical socket mount - 65
Wt Weight 2.0 (0.07) - g (oz)
1
3/26/99
lnternahtonal
IRG4ll3C30FD :roRRectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltages 600 - - V VGE = 0V, Ic = 250PA
AV
VCE(on) Collector-to-Emitter Saturation Voltage - 1.59 1.8 lc = 17A VGE = 15V
- 1.99 - V k: = 31A See Fig. 2, 5
- 1.70 - Ic =17A,Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250uA
AVGEgfe Forward Transconductance © 6.1 10 - S VCE = 100V, lc = 17A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 2500 VGE = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V Ic = 12A See Fig. 13
- 1.3 1.6 Ic =12A,Tu =150°C
legs Gate-to-Emilie, Leakage Current - - i100 nA VGE=i20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 51 77 k: = 17A
Qge Gate - Emitter Charge (turn-on) - 7.9 12 nC Vcc = 400V See Fig. 8
Qqc Gate - Collector Charge (turn-on) - 19 28 VGE = 15V
two”) Turn-On Delay Time - 42 - TJ = 25''C
tr Rise Time -_.r. 26 - ns Ic = 17A, Vcc = 480V
td(off) Turn-Off Delay Time - 230 350 VGE = 15V, Rs = 239
k Fall Time - 160 230 Energy losses include "tail" and
Ea, Turn-On Switching Loss - 0.63 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 1.39 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 2.02 3.9
td(on) Turn-On Delay Time - 42 TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 27 - ns Ic = 17A, Vcc = 480V
toom Turn-Off Delay Time - 310 - VGE = 15V, Rs = 239
tf Fall Time - 310 - Energy losses include "tail" and
Ets Total Switching Loss - 3.2 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = 0V
Coes Output Capacitance - 74 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns To = 25°C See Fig.
- 80 120 To = 125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Curren - 3.5 6.0 A TJ = 25''C See Fig.
- 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC TJ = 25°C See Fig.
- 220 600 To = 125°C 16 di/dt 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 180 - Alps To = 25°C See Fig.
During tr, - 120 - To = 125°C 17
2
