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IRG4IBC20UD-IRG4IBC20UDPBF
600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak package
International
:raRlectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRG4ll3
PD -91752A
UItraFast CoPack IGBT
Features 0
. 2.5kV, 60s insulation voltage s VCES = 600V
. 4.8 mm creapage distance to heatsink
. UItraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200 VCE(0n) typ. = 1.85V
kHz in resonant mode
. IGBT co-packaged with HEXFREDTM ultrafast, E @VGE = 15V, Ic = 6.5A
ultrasoft recovery antiparallel diodes
. Tighter parameter distribution n 'Ch a n n el
. Industry standard Isolated TO-220 FullpakTM
outline
Benefits F,
. Simplified assembly PEtt,C.r..r,.l
q Highest efficiency and power density
. HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
k; @ To = 25°C Continuous Collector Current 11.4
IC © To = 100°C Continuous Collector Current 6.0
ICM Pulsed Collector Current C) 52 A
ILM Clamped Inductive Load Current © 52
IF @ To = 100°C Diode Continuous Forward Current 6.5
IFM Diode Maximum Forward Current 52
Visol RMS Isolation Voltage, Terminal to Case© 2500 V
VGE Gate-to-Emitter Voltage 1 20
Pro @ To = 25°C Maximum Power Dissipation 34 W
Po @ Tc = 100°C Maximum Power Dissipation 14
Tu Operating Junction and -55 to +150
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
Fhuc Junction-to-Case - IGBT - 3.7
ReJC Junction-to-Case - Diode - 5.1 "C/W
ReJA Junction-to-Ambient, typical socket mount - 65
Wt Weight 2.0 (0.07) - g (oz)
1
4/24/2000
Internationd
IRG4ll3C20UD TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltages 600 - - V Vss = 0V, lc = 250pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.69 V/°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.85 2.1 lc = 6.5A VGE = 15V
- 2.27 - V Ic = 13A See Fig. 2, 5
- 1.87 - Ic = 6.5A, Tu = 150°C
VGE(1h) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250PA
AVGE(1h)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = Var, lc = 250PA
gfe Forward Transconductance © 1.4 4.3 - S VCE = 100V, IC = 6.5A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1700 I/ss = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V Ic = 8.0A See Fig. 13
- 1.3 1.6 k: = 8.0A, To = 150°C
legs Gate-to-Emitter Leakage Current - - t100 nA Vss = t20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 27 41 k; = 6.5A
Qge Gate - Emitter Charge (turn-on) - 4.5 6.8 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 10 16 Vss = 15V
td(on) Turn-On Delay Time - 39 - TJ = 25°C
tr Rise Time - 15 - ns Ic = 6.5A, Vcc = 480V
td(off) Turn-Off Delay Time - 93 140 I/ss = 15V, Rs = 50n
tr Fall Time - 110 170 Energy losses include "tail" and
E0n Turn-On Switching Loss - 0.16 - diode reverse recovery.
Es, Turn-Off Switching Loss --.- 0.13 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 0.29 0.3
td(on) Turn-On Delay Time - 38 - TJ = 150°C, See Fig. 9, 10, 11, 18
t, Rise Time - 17 - ns IC = 6.5A, Vcc = 480V
td(ott) Turn-Off Delay Time - 100 - l/ss = 15V, Rs = 509
If Fall Time - 220 - Energy losses include "tail" and
ES Total Switching Loss - 0.49 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 530 - VGE = 0V
Coes Output Capacitance - 39 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.4 - f = 1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns To = 25°C See Fig.
- 55 90 To =125°C 14 IF = 8.0A
Ir, Diode Peak Reverse Recovery Current - 3.5 5.0 A To = 25°C See Fig.
- 4.5 8.0 To = 125°C 15 Va = 200V
Qrr Diode Reverse Recovery Charge - 65 138 nC TJ = 25°C See Fig.
- 124 360 TJ = 125°C 16 di/dt 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 240 - A/ps To = 25°C See Fig.
During tn - 210 - To = 125°C 17
2
