IRG4IBC20FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak packageFeatures Very Low 1.66V votage dropV = 600VCES 2.5kV, 60s insulation voltage 4.8 mm creapa ..
IRG4IBC20KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220 FullPak packageFeaturesC High switching speed optimized for up to 25kHzV = 600V with low V CESCE(on) Short Circ ..
IRG4IBC20UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak packagePD -91752AIRG4IBC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT REC ..
IRG4IBC20UDPBF ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak packageFeatures 2.5kV, 60s insulation voltage V = 600VCES 4.8 mm creapage distance to heatsink Ult ..
IRG4IBC30FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak packageFeatures• Very Low 1.59V votage dropV = 600VCES• 2.5kV, 60s insulation voltage
• 4.8 mm creapa ..
IRG4IBC30KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220 FullPak packageFeatures C High switching speed optimized for up to 25kHzV = 600VCES with low VCE(on) Short Circ ..
ISO7230CDWG4 ,Triple Channel, 3/0, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list........ 1peak• Added t Part-to-part skew....... 10sk(pp)• Added t Part-to-part skew.. ..
ISO7230CDWRG4 ,Triple Channel, 3/0, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
ISO7230M ,Triple Channel, 3/0, 150Mbps, Digital IsolatorElectrical Characteristics: V and V at 3.3 V... 9CC1 CC213.1 Related Documentation..... 257.9 Power ..
ISO7230MDW ,Triple Channel, 3/0, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
ISO7230MDWG4 ,Triple Channel, 3/0, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features 2 Applications1• 25 and 150-Mbps Signaling Rate Options • Industrial Fieldbus– Low Channel ..
ISO7230MDWRG4 , HIGH SPEED, TRIPLE DIGITAL ISOLATORS
IRG4IBC20FD
600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak package
International
TOR Rectifier
PD -91750A
1RG4ll3C20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Fast CoPack IGBT
Features
. Very Low 1.66V votage drop
. 2.5kV, 60s insulation voltage ©
. 4.8 mm creapage distance to heatsink
. Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
VCES = 600V
E @VGE = 15V, IC = 9.0A
n -c h a n n el
q Tighter parameter distribution
. Industry standard Isolated TO-220 FullpakTM
outline
Benefits I 's-f'':':.',.,",.,.',-,"
. Simplified assembly
. Highest efficiency and power density
. HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600 V
k; © To = 25°C Continuous Collector Current 14.3
k: © To = 100°C Continuous Collector Current 7.7
ICM Pulsed Collector Current co 64 A
ILM Clamped Inductive Load Current © 64
IF @ To = 100°C Diode Continuous Forward Current 6.5
IFM Diode Maximum Forward Current 64
Visol RMS Isolation Voltage, Terminal to Case© 2500 V
Vss Gate-to-Emitter Voltage * 20
Pro @ To = 25°C Maximum Power Dissipation 34 W
Po @ To = 100°C Maximum Power Dissipation 14
Tu Operating Junction and -55 to +150
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - IGBT - 3.7
RQJC Junction-to-Case - Diode - 5.1 °CNV
RQJA Junction-to-Ambient, typical socket mount - 65
Wt Weight 2.0 (0.07) - g (oz)
1
4/24/00
International
IRG4ll3C20FD TOR Rectifier
Electrical Characteristics © Tr, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage© 600 - - V VGE = 0V, Ic = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.72 - V/°C VGE = 0V, lc = 1.0mA
VCE(on, Collector-to-Emitter Saturation Voltage - 1.66 2.0 Ic = 9.0A VGE = 15V
- 2.06 - V Ic = 16A See Fig. 2, 5
- 1.76 - Ic = 9.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Var, Ic = 250pA
AVGEm-O/ATJ Temperature Coeff. of Threshold Voltage - -1 1 - mV/°C VCE = VGE, lc = 250pA
9te Forward Transconductance Ci) 2.9 5.1 - S VCE = 100V, Ic = 9.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1700 I/ss = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V k: = 8.0A See Fig. 13
- 1.3 1.6 Ic = 8.0A, To =150°C
legs Gate-to-Emitter Leakage Current - - i100 nA VGE = :20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ch Total Gate Charge (turn-on) - 27 40 k; = 9.0A
Qge Gate - Emitter Charge (turn-on) - 4.2 6.2 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 9.9 15 Vias = 15V
tam) Turn-On Delay Time - 43 - To = 25°C
tr Rise Time - 20 - ns Ic = 9.0A, Vcc = 480V
tdwff) Turn-Off Delay Time - 240 360 Vas = 15V, RG = 509
t, Fall Time - 150 220 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.25 - diode reverse recovery.
Est Turn-Off Switching Loss - 0.64 - mJ See Fig. 9, 10, 18
Ets Total Switching Loss - 0.89 1.3
tam) Turn-On Delay Time - 41 - TJ = 150°C, See Fig. 11, 18
tr Rise Time - 22 - ns Ic = 9.0A, Vcc = 480V
td(off) Turn-Off Delay Time - 320 - Vas = 15V, Rs = 509
tf Fall Time - 290 - Energy losses include "tail" and
Ets Total Switching Loss - 1.35 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 540 - VGE = 0V
Goes Output Capacitance - 37 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.0 - f = 1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns To = 25°C See Fig.
- 55 90 To = 125°C 14 IF = 8.0A
lrr Diode Peak Reverse Recovery Current - 3.5 5.0 A To = 25°C See Fig.
- 4.5 8.0 To = 125°C 15 Va = 200V
Qrr Diode Reverse Recovery Charge - 65 138 nC To =25°C See Fig.
- 124 360 TJ = 125°C 16 di/dt = 200Aps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 240 - A/ps TJ = 25°C See Fig.
During tn - 210 - To = 125°C 17
