IRG4IBC10UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak packageFeatures• UltraFast: Optimized for high operating up toV = 2.15VCE(on) typ. 80 kHz in hard switch ..
IRG4IBC20FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak packageFeatures Very Low 1.66V votage dropV = 600VCES 2.5kV, 60s insulation voltage 4.8 mm creapa ..
IRG4IBC20KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220 FullPak packageFeaturesC High switching speed optimized for up to 25kHzV = 600V with low V CESCE(on) Short Circ ..
IRG4IBC20UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak packagePD -91752AIRG4IBC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT REC ..
IRG4IBC20UDPBF ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak packageFeatures 2.5kV, 60s insulation voltage V = 600VCES 4.8 mm creapage distance to heatsink Ult ..
IRG4IBC30FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak packageFeatures• Very Low 1.59V votage dropV = 600VCES• 2.5kV, 60s insulation voltage
• 4.8 mm creapa ..
ISO7230CDW ,Triple Channel, 3/0, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features 2 Applications1• 25 and 150-Mbps Signaling Rate Options • Industrial Fieldbus– Low Channel ..
ISO7230CDWG4 ,Triple Channel, 3/0, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list........ 1peak• Added t Part-to-part skew....... 10sk(pp)• Added t Part-to-part skew.. ..
ISO7230CDWRG4 ,Triple Channel, 3/0, 25Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
ISO7230M ,Triple Channel, 3/0, 150Mbps, Digital IsolatorElectrical Characteristics: V and V at 3.3 V... 9CC1 CC213.1 Related Documentation..... 257.9 Power ..
ISO7230MDW ,Triple Channel, 3/0, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features list....... 1Changes from Revision E (June 2008) to Revision F Page• Deleted device number ..
ISO7230MDWG4 ,Triple Channel, 3/0, 150Mbps, Digital Isolator 16-SOIC -40 to 125Features 2 Applications1• 25 and 150-Mbps Signaling Rate Options • Industrial Fieldbus– Low Channel ..
IRG4IBC10UD
600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. UItraFast: Optimized for high operating up to
80 kHz in hard switching, > 200 kHz in
resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher emciency than
previous generation
. IGBT co-packaged with HEXFRED© ultrafast,
PD - 93765
IRG4ll3C'10UD
UItraFast Co-Pack IGBT
C VCES = 600V
N-channel
@VGE = 15V, Ic = 5.0A
tf(typ.) = 140ns
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
. Industry standard TO-220 Full-Pak
Benefits
. Generation 4 IGBTs offer highest efficiencies available
. IGBTs optimized for specific application conditions
. HEXFRED® diodes optimized for performance with IGBTs
Minimized recovery characteristics require less/no snubbing
Absolute Maximum Ratings
TO-220 FuII-Pak
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 6.8
Ic @ Tc = 100°C Continuous Collector Current 3.9
ICM Pulsed Collector Current co 27 A
ILM Clamped Inductive Load Current C) 27
IF @ Tc = 100°C Diode Continuous Forward Current 3.9
IFM Diode Maximum Forward Current 27
VISOL RMS Isolated Voltage, Terminal to case, t=1min 2500 V
VGE Gate-to-Emitter Voltage i 20
Pro @ Tc = 25°C Maximum Power Dissipation 25 W
Pro @ Tc = 100°C Maximum Power Dissipation 10
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - IGBT - 5.0
ReJC Junction-to-Case - Diode - 9.0 °C/W
RNA Junction-to-Ambient, typical socket mount - 65
Wt Weight 2.1 (0.075) - g (oz)
1
10/27/99
IRG4lBC10UD International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage © 600 - - V VGE = 0V, IC = 250PA
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage - 0.54 - V/°C VGE = 0V, Ic = 1.0mA
Vegan) Collector-to-Emir Saturation Voltage - 2.15 2.6 k: = 5.0A VGE = 15V
- 2.61 - V lc = 8.5A See Fig. 2, 5
- 2.30 - Ic = 5.0A, TJ = 150°C
Vegan) Gate Threshold Voltage (4) 3.0 - 6.0 VCE = VGE, lc = 250pA
DVGE
ge, Forward Transconductance 2.8 4.2 - S VCE = 100V, Ic = 5.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 l/GE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V k: = 4.0A See Fig. 13
- 1.4 1.7 lc = 4.0A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current - - A100 nA VGE = A20V
Switching Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 15 22 k: = 5.0A
Qge Gate - Emitter Charge (turn-on) - 2.6 4.0 no Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 5.8 8.7 VGE = 15V
tam) Turn-On Delay Time - 40 - To = 25°C
tr Rise Time - 16 - ns lc = 5.0A, Vcc = 480V
tuom Turn-Off Delay Time - 87 130 VGE = 15V, Rs = 100W
tf Fall Time - 140 210 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.14 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.12 - mJ See Fig. 9, IO, 18
Ets Total Switching Loss - 0.26 0.33
tdwn) Turn-On Delay Time - 38 - To = 150°C, See Fig. 11, 18
tr Rise Time - 18 - ns Ic = 5.0A, Vcc = 480V
tam) Turn-Off Delay Time - 95 - VGE = 15V, Rs = 100W
tr Fall Time - 250 - Energy losses include "tail" and
Ets Total Switching Loss - 0.45 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 270 - VGE = 0V
Coes Output Capacitance - 21 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 3.5 - f = 1.0MHz
tn Diode Reverse Recovery Time - 28 42 ns TJ = 25°C See Fig.
- 38 57 To = 125°C 14 IF = 4.0A
Ir, Diode Peak Reverse Recovery Current - 2.9 5.2 A To = 25°C See Fig.
- 3.7 6.7 To = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 40 60 nC To = 25°C See Fig.
- 70 105 TJ = 125°C 16 di/dt = 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps TJ = 25°C See Fig.
During tr, - 235 - To = 125°C 17
Details of note (D through © are on the last page
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