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IRG4BH20K-S
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package
International
IéaR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. High short circuit rating optimized for motor control,
tsc =10ps @ Vcc= 720V, T: = 125°C,
VGE = 15V
. Combines low conduction losses with high
switching speed
. Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
. Industry standard D2Pak package
Benefits
PD -93960
IRG4BH20K-S
Short Circuit Rated
UItraFast IGBT
n-channel
VCES = 1200V
@VGE =15V, lc = 5.0A
. As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
. Latest generation 4 IGBT's offer highest power
density motor controls possible
Absolute Maximum Ratings
Parameter Max. Units
I/css Collector-to-Emitter Voltage 1200 V
Ic @ Tc = 25°C Continuous Collector Current 11
lo @ Tc = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector Current C) 22 A
ILM Clamped Inductive Load Current © 22
tsc Short Circuit Vthtand Time 10 us
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 130 mJ
PD @ Tc = 25°C Maximum Power Dissipation 60 W
PD @ Tc = 100°C Maximum Power Dissipation 24
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ''C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
8/17/00
|RG4BH20K-S
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 - - V VGE = 0V, lc = 250pA
V(BR)scs Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CE$IATJ Temperature Coeff. of Breakdown Voltage - 1.13 - V/°C VGE = 0V, lc = 2.5mA
- 3.17 4.3 k; = 5.0A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage - 4.04 - V Io = 11A See Fig.2, 5
- 2.84 - IC = 5.0A , To = 150°C
VGE(th) Gate Threshold Voltage 3.5 - 6.5 VCE = VGE, Ic = 250PA
AVGEMIATJ Temperature Coeff. of Threshold Voltage - -10 - mVI°C VCE = VGE, lc = 1mA
We Forward Transconductance © 2.3 3.5 - S VCE = 100 V, Ic = 5.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE =1200V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 1200V, Tu = 150°C
ds Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 28 43 Ic = 5.0A
Qge Gate - Emitter Charge (turn-on) - 4.4 6.6 no Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 12 18 VGE = 15V
tam) Turn-On Delay Time - 23 -
t, Rise Time - 26 - ns T: = 25°C
tum) Turn-Off Delay Time - 93 140 lc =5.0A, Vcc = 960V
tf Fall Time - 270 400 VGE = 15V, Rs = 50n
Eon Turn-On Switching Loss - 0.45 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.44 - mJ See Fig. 9,10,14
Es Total Switching Loss - 0.89 1.2
tsc Short Circuit VWthstand Time 10 - - us Vcc = 720V, To = 125°C
VGE = 15V, Rs = 50n
tdmn) Turn-On Delay Time - 23 - Tu = 150°C,
tr RiseTime - 28 - lc = 5.0A, Vcc = 960V
two Turn-Off Delay Time - 100 - ns l/GE = 15V, Rs = 50n
tr FaIITime - 620 - Energy losses include "tail"
Els Total Switching Loss - 1.7 - tttl See Fig. 10,11,14
LE Internal Emitter Inductance - 7.5 - nH Between lead and center of die contact
Cies Input Capacitance - 435 - VGE = 0V
Coes Output Capacitance - 44 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 8.3 - f = 1.0MHz
Notes:
co Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See fig. 13b)
© Vcc = 80%(VcEs), vGE = 20v, L = 10pH, Rs =50f2,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width 3 80ps; duty factor 3 0.1%.
s Pulse width 5.0ps, single shot.
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
