IRG4BC40WS ,600V Warp 60-150 kHz Discrete IGBT in a D2Pak package IRG4BC40WSIRG4BC40WL
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IRG4BC40WS
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package
International
Ttthit, Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 95861
IRG4BC40WS
|RG4BC4OWL
Features
. Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
. Industry-benchmark switching losses improve
efficiency of all power supply topologies
. 50% reduction of Eoff parameter
. Low IGBT conduction losses
. Latest-generation IGBT design and construction offers n-channel
VCES =
VCE(on) typ. = 2.05V
E @VGE = 15V, lc = 20A
tighter parameters distribution, exceptional reliability
Benefits
. Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
. Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
. Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
TO-262
IRG4BC40WS |RG4BC4OWL
Parameter
chs Collector-to-Emir Breakdown Voltage
lc @ Tc = 25°C Continuous Collector Current
lc @ Tc = 100°C Continuous Collector Current
ICM Pulsed Collector Current C)
ILM Clamped Inductive Load Current ©
VGE Gate-to-Emitter Voltage
EARV Reverse Voltage Avalanche Energy s
Pro @ Tc = 25°C Maximum Power Dissipation
Pro @ Tc = 100°C Maximum Power Dissipation
T: Operating Junction and
TSTG Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter
Typ. Max.
ROJC Junction-to-Case
- 0.77
Recs Case-to-Sink, Flat, Greased Surface
ReJA Junction-to-Ambient (PCB Mounted steady-state
Wt Weight
2.0 (0.07) -
g (oz)
4/19/04
International
|RG4BC4OWS/L To.R Reamer
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, lc = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, k: = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.44 - V/°C VGE = 0V, lc = 1.0mA
- 2.05 2.5 Ic = 20A VGE = 15V
VCE(ON) Collector-tty-Emilie, Saturation Voltage - 2.36 - V Ic = 40A See Fig.2, 5
- 1.90 - Ic=20A,TJ=150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - 13 - mV/°C VCE = VGE, lc = 250pA
ge, Forward TransConductance © 18 28 - S VCE = 100 V, Ic =20A
Ices Zero Gate Voltage Collector Current - - 250 PA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25''C
- - 2500 VGE = 0V, VCE = 600V, To = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 98 147 lc =20A
Qge Gate - Emitter Charge (turn-on) - 12 18 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 36 54 VGE = 15V
tum) Turn-On Delay Time - 27 -
tr Rise Time - 22 - ns T: = 25°C
td(St) Turn-Off Delay Time - 100 150 Ic = 20A, Vcc = 480V
tf Fall Time - 74 110 Vss = 15V, Rs = lon
E0n Turn-On Switching Loss - 0.11 - Energy losses include "tail"
Es, Turn-Off Switching Loss - 0.23 - mJ See Fig. 9,10, 14
ES Total Switching Loss - 0.34 0.45
td(on) Turn-On Delay Time - 25 - T: = 150°C,
tr Rise Time - 23 - ns Ic = 20A, Vcc = 480V
td(0ff) Turn-Off Delay Time - 170 - VGE = 15V, Rs = lon
tf Fall Time - 124 - Energy losses include "tail"
Ets Total Switching Loss - 0.85 - mJ See Fig. 10,11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1900 - VGE = 0V
Coes Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 35 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See fig. 13b )
© Vcc = 80%(VcEs), Vas = 20V, L = 10pH, Rs = Ion,
(See fig. 13a)
C3) Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width S 80ps,' duty factor 3 0.1%.
S Pulse width 5.0ps, single shot.
