IRG4BC40W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageFeatures Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor correct ..
IRG4BC40WS ,600V Warp 60-150 kHz Discrete IGBT in a D2Pak package IRG4BC40WSIRG4BC40WL
IRG4BC40W-S ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.05VCE(on) typ.G efficiency of all p ..
IRG4BH20K-S ,1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak packageFeatures• High short circuit rating optimized for motor control,V = 1200VCES t =10μs @ V = 720V , ..
IRG4IBC10UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak packageFeatures• UltraFast: Optimized for high operating up toV = 2.15VCE(on) typ. 80 kHz in hard switch ..
IRG4IBC20FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak packageFeatures Very Low 1.66V votage dropV = 600VCES 2.5kV, 60s insulation voltage 4.8 mm creapa ..
ISO7221MD ,Dual Channel, 1/1, 150Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7221MDR ,Dual Channel, 1/1, 150Mbps Digital Isolator 8-SOIC -40 to 125Electrical Characteristics—2.8-V V and VCC1 CC212.3 Receiving Notification of Documentation Updates ..
ISO722D ,Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO722DR ,Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125Electrical Characteristics, 3.3 V .... 813.2 Related Links.. 267.9 Power Dissipation........ 813.3 ..
ISO722DR ,Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
ISO722MDR ,Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125Electrical Characteristics, 3.3 V .... 813.2 Related Links.. 267.9 Power Dissipation........ 813.3 ..
IRG4BC40W-IRG4BC40W-S
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
International PD-91654A
TOR Rectifier IRG4BC40W
INSULATED GATE BIPOLAR TRANSISTOR
Features C
. Designed expressly for Switch-Mode Power V - V
Supply and PFC (power factor correction) CES - 600
applications
. 1.iu.stry-beytmark switching losses. improve G VCE(on)typ. = 2.05V
efficiency of all power supply topologies
. 50% reduction of Eoff parameter - _
V - 1 V I - 2 A
. Low IGBT conduction losses E @ GE 5 , C 0
. Latest-generation IGBT design and construction offers n-channel
tighter parameters distribution, exceptional reliability
Benefits
. Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
. Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
. Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emi) Breakdown Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 40
k: @ To = 100°C Continuous Collector Current 20 A
ICM Pulsed Collector Current C) 160
ILM Clamped Inductive Load Current © 160
VGE Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy © 160 m]
Po @ Tc = 25°C Maximum Power Dissipation 160 W
PD @ Tc = 100°C Maximum Power Dissipation 65
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.5 - °CNV
ReJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
4/24/2000
International
IRG4BC40W TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
V(BR)CES Collector-to-Emile Breakdown Voltage 600 - - V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.44 - V/°C VGE = 0V, Ic = 1.0mA
- 2.05 2.5 k, = 20A VGE = 15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.36 - V Io = 40A See Fig.2, 5
- 1.90 - Ic = 20A , To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - 13 - mvrc VCE = VGE, k: = 250pA
We Forward Transconductanoe s 18 28 - S VCE = 100 V, Ic =20A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 2500 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-to-Emilie, Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 98 147 lc =20A
Qge Gate - Emitter Charge (turn-on) - 12 18 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 36 54 Vas = 15V
tdwn) Turn-On Delay Time - 27 -
tr Rise Time - 22 - ns T: = 25°C
tum) Turn-Off Delay Time - 100 150 lc = 20A, Vcc = 480V
tf FalITime - 74 110 VGE = 15V, Rs = lon
Ei,, Turn-On Switching Loss - 0.11 - Energy losses include "tail"
Ed Turn-Off Switching Loss - 0.23 - m] See Fig. 9,10, 14
G Total Switching Loss - 0.34 0.45
tuom Turn-On Delay Time - 25 - Tu = 150°C,
tr RiseTime - 23 - ns lc = 20A, Vcc = 480V
td(off) Turn-Off Delay Time - 170 - VGE = 15V, Rs = lon
tr FaIITime - 124 - Energy losses include "tail"
EU Total Switching Loss - 0.85 - mJ See Fig. 10,11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1900 - VGE = 0V
Cues Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 35 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE= 20V, pulse width limited by
max. junction temperature. (See fig. 13b)
Vcc = 80%(VCE3), VGE = 20V, L = 10pH, Rs = Ion,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width f 80ps,' duty factor S 0.1%.
s Pulse width 5.0ps, single shot.
