IRG4BC40UPBF ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
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IRG4BC40WS ,600V Warp 60-150 kHz Discrete IGBT in a D2Pak package IRG4BC40WSIRG4BC40WL
IRG4BC40W-S ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.05VCE(on) typ.G efficiency of all p ..
IRG4BH20K-S ,1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak packageFeatures• High short circuit rating optimized for motor control,V = 1200VCES t =10μs @ V = 720V , ..
IRG4IBC10UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak packageFeatures• UltraFast: Optimized for high operating up toV = 2.15VCE(on) typ. 80 kHz in hard switch ..
ISO7221MD ,Dual Channel, 1/1, 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
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IRG4BC40UPBF
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
International PD - 95428A
1:23 Rectifier llRG4BC40UPbF
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
Features C
. UltraFast: optimized for high operating
frequencies 8-40 KHz in hard switching, >200 VcEs=600V
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3 - -
. Industry standard TO-220AB package E @VGE - 15V, lc - 20A
. Lead-Free n-channel
G VCE(on)typ_=1.72V
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specfed application conditions ... ,
. Designed to be a "drop-in" replacement for equivalent "':s,1ircaif'
industry-standard Generation 3 IR IGBTs ts 0‘ N
N.." _'"st
TO-22OAB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Io @ Tc = 25°C Continuous Collector Current 40
lo @ Tc = 100°C Continuous Collector Current 20 A
ICM Pulsed Collector Current (D 160
ILM Clamped Inductive Load Current © 160
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 15 ml
Pro @ Tc = 25°C Maximum Power Dissipation 160 W
Pro @ Tc = 100°C Maximum Power Dissipation 65
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rouc Junction-to-Case ------------ 0.77
Recs Case-to-Sink, flat, greased surface - 0.50 - "CM/
RBJA Junction-to-Ambient, typical socket mount ------------ 80
Wt Weight ------ 2 (0.07) ------ g (oz)
1
02/18/10
IRG4BC40UPbF
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - ---- V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage (9 18 - ---- V VGE = 0V, k: = 1.0A See Fig. 2 5
AV(BR)ces/AT Temperature Coeff. of Breakdown Voltage - 0.63 ---- V/°C VGE = 0V, Ic = 1.0mA
Vcaon) Collector-to-Emitter Saturation Voltage - 1.72 2.1 lc = 20A VGE = 15V
- 2.15 - V lc = 40A
---- 1.7 - lc = 20A, Tu =150°C
VGEM Gate Threshold Voltage 3.0 - 6.0 VCE = VGE. Ic = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -13 ---- mV/°C VCE = VGE, Ic = 250pA
gre Forward Transconductance © 11 18 ---- S l/ce = 100V, k: = 20A
- - 250 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current ---- ---- 2.0 pA VGE = 0V, VCE = 10V, Tu = 25''C
---- - 2500 VGE = 0V, VCE = 600V, To = 150''C
lass Gate-to-Emitter Leakage Current - - 1100 nA VGE = 120V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 100 150 lc = 20A
Qge Gate - Emitter Charge (turn-on) - 16 25 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 4O 60 VGE = 15V
tum) Turn-On Delay Time - 34 ---- Tu = 25°C
tr RiseTime - 19 - ns lc = 20A, Vcc = 480V
td(off) Turn-Off Delay Time ---- 110 175 VGE = 15V, RG = 109
tf FaIITime - 120 180 Energy losses include "tail"
EOh Turn-On Switching Loss - 0.32 ----
Eoff Turn-Off Switching Loss - 0.35 ---- mJ See Fig. 10, 11, 13, 14
ES Total Switching Loss - 0.67 1.0
tum) Turn-On Delay Time ---- 3O ---- Tu = 150°C,
t, RiseTime ---- 19 ---- ns IC = 20A, Vcc = 480V
tam) Turn-Off Delay Time - 220 ---- VGE = 15V, Rs = 109
tt FaIITime - 160 ---- Energy losses include "tail"
Es Total Switching Loss - 1.4 ---- mJ See Fig. 13, 14
LE Internal Emitter Inductance - 7.5 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 2100 ---- VGE = 0V
Coes Output Capacitance - 140 ---- pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 34 ---- f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VCE3), l/se = 20V, L =10pH, RG =1OQ,
(see fig. 13a)
co Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width S 80ps; duty factor S 0.1%.
CO Pulse width 5.0ps, single shot.
