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IRG4BC40U
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
Internet onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91456E
IRG4BC40U
Ultra Fast Speed IGBT
Features
. UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-220AB package
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
VCES = 600V
E @VGE=15V, lc=20A
n-channel
------rcr")
k (rd)
Absolute Maximum Ratings TO4220AB
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
k; @ To = 25°C Continuous Collector Current 40
lc © To = 100°C Continuous Collector Current 20 A
ICM Pulsed Collector Current C) 160
u, Clamped Inductive Load Current © 160
l/ss Gate-to-Emitter Voltage :20 V
EARV Reverse Voltage Avalanche Energy © 15 ntl
PD @ Tc = 25''C Maximum Power Dissipation 160 W
PD © Tc = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibein (IAN-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Reuc Junction-to-Case ------------ 0.77
Recs Case-to-Sink, flat, greased surface - 0.50 - °CNV
Raox Junction-to-Ambient, typical socket mount ------------ 80
Wt Weight - 2 (0.07) - g (oz)
1
4/17/2000
IRG4BC40U
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, Ic = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A See Fia. 2 5
AV(BR)CEs/AT Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C I/ss = 0V, lc = 1.0mA
VCE(0n) Collector-to-Emitter Saturation Voltage - 1.72 2.1 IC = 20A VGE = 15V
- 2.15 - V IC=4OA
- 1.7 - Io =2OA, Tu-- 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGEuhyATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C Vcs = Vas, Ic = 250pA
gm Forward Transconductance S 11 18 - S VCE = 100V, Ic = 20A
- - 250 Vas = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current - - 2.0 pA VGE = 0V, VCE = 10V, Tu = 25°C
- - 2500 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - t100 nA Vss = :20V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 100 150 Ic = 20A
Qqe Gate - Emitter Charge (turn-on) - 16 25 n0 Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 4O 60 l/ss = 15V
tdwn) Turn-On Delay Time - 34 - Tu = 25°C
tr RiseTime - 19 - ns Ic = 20A, Vcc = 480V
td(off) Turn-Off Delay Time - 110 175 I/ss = 15V, Re = 109
tt FallTime - 120 180 Energy losses include "tail"
EOn Turn-On Switching Loss - 0.32 -
Rs, Turn-Off Switching Loss - 0.35 - ml See Fig. IO, 11, 13, 14
Ets Total Switching Loss - 0.67 1.0
tam”) Turn-On Delay Time - 30 - TJ = 150°C,
t, RiseTime - 19 - ns Ic = 20A, Vcc = 480V
td(off) Turn-Off Delay Time ---- 220 - l/ss = 15V, Rs = 109
tr FallTime ---- 160 - Energy losses include "tail"
Eis Total Switching Loss - 1.4 - rN See Fig. 13, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 2100 - VGE = 0V
G, Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 34 -- f =1.0MHz
Notes:
(D Repetitive rating; Vas-- 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(Vcss), vGE = 20v, L =10pH, Rs = Ion,
(see fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
co Pulse width f, 80ps; duty factor I 0.1%.
s Pulse width 5.0ps, single shot.
