IRG4BC40S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageFeatures C Standard: optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4BC40U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeatures C• UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switc ..
IRG4BC40UPBF ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
IRG4BC40W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageFeatures Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor correct ..
IRG4BC40WS ,600V Warp 60-150 kHz Discrete IGBT in a D2Pak package IRG4BC40WSIRG4BC40WL
IRG4BC40W-S ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.05VCE(on) typ.G efficiency of all p ..
ISO7221BDR ,Dual Channel, 1/1, 5Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7221CD ,Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7221CDR ,Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7221M ,Dual Channel, 1/1, 150Mbps Digital Isolator SLLS755O–JULY 2006–REVISED APRIL 2017• Added the DTI parameter to the IEC Package Characteristics ..
ISO7221MD ,Dual Channel, 1/1, 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7221MD ,Dual Channel, 1/1, 150Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
IRG4BC40S
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
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TOR Rectifier
INSULATEDGATE BIPOLARTRANSISTOR
PD - 91455B
IRG4BC40S
Standard Speed IGBT
Features
. Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-220AB package
n-channel
VCES = 600V
VCE(on) typ. = 1.32V
@VGE= 15V, lc--31A
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
Vcss Collector-to-Emitter Breakdown Voltage 600 V
k: @ To = 25°C Continuous Collector Current 60
IC @ To = 100°C Continuous Collector Current 31 A
ICM Pulsed Collector Current C) 120
ILM Clamped Inductive Load Current © 120
Vss Gate-to-Emitter Voltage 1 20 V
EARV Reverse Voltage Avalanche Energy s 15 W
PD @ To = 25°C Maximum Power Dissipation 160 W
PD @ To = 100°C Maximum Power Dissipation 65
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
Ram Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
4/17/2000
IRG4BC40S International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmmas Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, k; = 1.0A
AV(BR,CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.75 - V/°C Vas = 0V, Ic =1.0mA
- 1.32 1.5 IC = 31A VGE =15V
VCHON) Collector-to-Emi) Saturation Voltage - 1.68 - V Ic = 60A See Fig.2, 5
- 1.32 - |C=31A,TJ=150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250p A
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -9.3 - mV/°C VCE = VGE, Ic = 250PA
ge, Forward Transconductance © 12 21 - S VCE = 100V, k; = 31A
Ices Zero Gate Voltage Collector Current - - 250 pA l/ss = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-to-Emitter Leakage Current - - i100 nA Vas = :20V
Switching Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 100 150 IC = 31A
099 Gate - Emitter Charge (turn-on) - 14 21 nC Vcc = 400V See Fig. 8
099 Gate - Collector Charge (turn-on) - 34 51 V95 = 15V
td(on) Turn-On Delay Time - 22 -
t, RiseTime - 18 - ns Tu = 25°C
tdm) Turn-Off Delay Time - 650 980 Ic = 31A, Vcc = 480V
t, FaIITime - 380 570 Vas = 15V, RG = 109
Eon Turn-On Switching Loss - 0.45 - Energy losses include "tail"
fis, Turn-Off Switching Loss - 6.5 - tttl See Fig. IO, 11, 13, 14
Ee Total Switching Loss - 6.95 9.9
tdmn) Turn-On Delay Time - 23 - T: = 150°C,
tr RiseTime - 21 - ns Ic = 31A, Vcc = 480V
tam) Turn-Off Delay Time - 1000 - VGE = 15V, Rs = lon
t: FaIITime - 940 - Energy losses include "tail"
Ets Total Switching Loss - 12 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 2200 - I/SE = 0V
Goes Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 26 - f =1.0MHz
Notes:
C) Repetitive rating; Var-- 20V, pulse width limited by (ii) Pulse width S 80ps; duty factor 3 0.1%.
max. junction temperature. ( See fig. 13b )
s Pulse width 5.0ps, single shot.
© Vcc = 80%(VCEs), l/se = 20V, L = 10pH, Rs = Ion,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
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