IRG4BC40FPBF ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
IRG4BC40K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB packageFeatures Short Circuit Rated UltraFast: optimized for highV = 600VCES operating frequencies >5.0 ..
IRG4BC40S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageFeatures C Standard: optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4BC40U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeatures C• UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switc ..
IRG4BC40UPBF ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
IRG4BC40W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageFeatures Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor correct ..
ISO7221AD ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7221ADR ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7221ADRG4 ,Dual Channel, 1/1, 1Mbps Digital Isolator 8-SOIC -40 to 125Electrical Characteristics—2.8-V V and VCC1 CC212.3 Receiving Notification of Documentation Updates ..
ISO7221BD ,Dual Channel, 1/1, 5Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7221BDR ,Dual Channel, 1/1, 5Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7221CD ,Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
IRG4BC40FPBF
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
International
1% Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-220AB package
. Lead-Free
Benefits
PD - 95447A
IRG4BC40FPbF
Fast Speed IGBT
n-channel
VCES = 600V
VCE(on)typ. = 1 .50V
@VGE = 15V, k: = 27A
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specired application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 49
lo @ Tc = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current (D 196
Ira, Clamped Inductive Load Current © 196
l/se Gate-to-Emitter Voltage i 20 V
EARV Reverse Voltage Avalanche Energy © 15 m]
PD @ Tc = 25°C Maximum Power Dissipation 160 W
PD @ Tc = 100°C Maximum Power Dissipation 65
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
RQJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (th07) - g (oz)
1
02/15/10
IRG4BC4OFPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(BR)Ecs Emitter-to-Collector Breakdown Voltage 6) 18 - - V VGE = 0V, lc = 1.0A
AV(BR,CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.70 - V/°C VGE = 0V, k: = 1.0mA
- 1.50 1.7 Ic = 27A VGE = 15V
VCE(0N) Collector-to-Emitter Saturation Voltage - 1.85 - V Ic = 49A See Fig.2, 5
- 1.56 - Ic=27A,To=15ty'C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C VCE = VGE, k: = 250pA
gre Forward Transconductance s 9.2 12 - S VcE = 100V, lc = 27A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, Tu = 150''C
lass Gate-to-Emi) Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 100 150 Ic = 27A
Qge Gate - Emitter Charge (turn-on) - 15 23 nC Vcc = 400V See Fig. 8
(Ar: Gate - Collector Charge (turn-on) - 35 53 VGE = 15V
tum) Turn-On Delay Time - 26 -
tr Rise Time - 18 - ns Tu = 25°C
tdom Turn-Off Delay Time - 240 360 IC = 27A, Vcc = 480V
tr FaIITime - 170 250 VGE = 15V, R3 = 109
G, Turn-On Switching Loss - 0.37 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 1.81 - m] See Fig. 10, 11, 13, 14
G Total Switching Loss - 2.18 2.8
td(on) Turn-On Delay Time - 25 - Tu = 150''C,
tr RiseTime - 21 - ns lc = 27A, Vcc = 480V
tam) Turn-Off Delay Time - 380 - VGE = 15V, R3 = 109
tr FallTime - 310 - Energy losses include "tail"
Es Total Switching Loss - 3.9 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 2200 - VGE = 0V
Cas Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 29 - f = 1.0MHz
Notes:
co Repetitive rating; VGE= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
C) Vcc = 80%(VcEs), VGE= 20V, L = 10pH, Rs = 109,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width S 80ps; duty factor 5 0.1%.
s Pulse width 5.0ps, single shot.
