IRG4BC30W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.70VCE(on) max.G efficiency of all p ..
IRG4BC30WS ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)applications• Industry-benchmark switching losses improveV = 2.10VCE(on) typ.G efficiency of all p ..
IRG4BC30W-S ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageapplications• Industry-benchmark switching losses improveV = 2.10VCE(on) typ.G efficiency of all p ..
IRG4BC30W-STRL ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageFeatures C• Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor corre ..
IRG4BC40F ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB packageFeatures C Fast: optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
IRG4BC40FPBF ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
ISO7220ADR ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220BD ,Dual Channel, 2/0, 5Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220BDR ,Dual Channel, 2/0, 5Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7220C ,Dual Channel, 2/0, 25Mbps Digital IsolatorFeaturesbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220CDR ,Dual Channel, 2/0, 25Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7220MD ,Dual Channel, 2/0, 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
IRG4BC30W
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
PD - 91629A
|RG4BC3OW
Internat onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features C
. Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
. Industry-benchmark switching losses improve
efficiency of all power supply topologies
. 50% reduction of Eoff parameter
. Low IGBT conduction losses
. Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
VCES = 600V
G VCE(on) max. = 2.70V
E @VGE= 15v, Ic= 12A
n-channel
. Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
. Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
. Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 23
lo @ Tc = 100°C Continuous Collector Current 12 A
ICM Pulsed Collector Current co 92
ILM Clamped Inductive Load Current © 92
N/ss Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy © 180 mJ
PD @ Tc = 25°C Maximum Power Dissipation 100 W
PD @ Tc = 100°C Maximum Power Dissipation 42
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 1 .2
Recs Case-to-Sink, Flat, Greased Surface 0.50 - 'C/W
ReJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 1.44 - g
1
4/24/2000
|RG4BC30W
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CE$/ATJ Temperature Coeff. of Breakdown Voltage - 0.34 - V/°C l/ss = ov, lc = 1.0mA
- 2.1 2.7 Ic= 12A VGE=15V
VCE(ON) Collector-to-emitter Saturation Voltage - 2.45 - V Ic = 23A See Fig.2, 5
- 1.95 - Ic=12A,To=150''C
VGEW Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductanoe S 11 16 - S VCE = 100 V, Ic = 12A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, I/cs = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25''C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-to-Emi) Leakage Current - - i100 nA VGE = EBN
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 51 76 lc = 12A
Qge Gate - Emitter Charge (turn-on) - 7.6 11 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 18 27 Vas = 15V
tdwn) Turn-On Delay Time - 25 -
tr Rise Time - 16 - ns Tu = 25°C
ttiiott) Turn-Off Delay Time - 99 150 lc = 12A, Vcc = 480V
t; Fall Time - 67 100 VGE = 15V, RG = 239
Eon Turn-On Switching Loss - 0.13 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.13 - mJ See Fig. 9, IO, 13, 14
Ets Total Switching Loss - 0.26 0.35
tum”) Turn-On Delay Time - 24 - Tu = 150°C,
tr Rise Time - 17 - ns k: = 12A, Vcc = 480V
tam) Turn-Off Delay Time - 150 - VGE = 15V, Rs = 23n
tf Fall Time - 150 - Energy losses include "tail"
Ets Total Switching Loss - 0.55 - mJ See Fig. 11,13, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 980 - VGE = 0V
Goes Output Capacitance - 71 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 18 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs), vGE = 20V, L = 10pH, Rs = 23:2,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width s 80ps; duty factor 3 0.1%.
© Pulse width 5.0ps, single shot.
