IRG4BC30UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4BC30U-S ,600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4BC30W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.70VCE(on) max.G efficiency of all p ..
IRG4BC30WS ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)applications• Industry-benchmark switching losses improveV = 2.10VCE(on) typ.G efficiency of all p ..
IRG4BC30W-S ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageapplications• Industry-benchmark switching losses improveV = 2.10VCE(on) typ.G efficiency of all p ..
IRG4BC30W-STRL ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageFeatures C• Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor corre ..
ISO7220AD ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7220ADR ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220BD ,Dual Channel, 2/0, 5Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220BDR ,Dual Channel, 2/0, 5Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7220C ,Dual Channel, 2/0, 25Mbps Digital IsolatorFeaturesbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220CDR ,Dual Channel, 2/0, 25Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
IRG4BC30UD
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
PD 91453B
International
TOR Rectifier IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UItraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C
. UltraFast: Optimized for high operating VCES = 600V
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
. Generation 4 IGBT design provides tighter G
parameter distribution and higher efficiency than
Generation 3 E @VGE = 15V, IC = 12A
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n-chann el
bridge configurations
. Industry standard TO-220AB package
Benefits
. Generation -4 IGBT's offer highest efficiencies
available
. IGBTs optimized for specific application conditions
I HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ To = 25°C Continuous Collector Current 23
lc @ Tc = 100°C Continuous Collector Current 12
ICM Pulsed Collector Current C) 92 A
ILM Clamped Inductive Load Current © 92
IF © To = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 92
VGE Gate-to-Emitter Voltage : 20 V
Pro @ To = 25°C Maximum Power Dissipation 100 W
Po @ To = 100°C Maximum Power Dissipation 42
Tu Operating Junction and -55 to +150
Tsrs Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1 .6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT ------------ 1.2
FUs Junction-to-Case - Diode ------------ 2.5 TUI/V
Ras Case-to-Sink, flat, greased surface - 0.50 -
RQJA Junction-to-Ambient, typical socket mount -__ 80
Wt Weight - 2 (0.07) - g (oz)
1
4/1 7/00
Internationd
IRG4BC30UD IEERReCHHer
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltages 600 - - V Vss = 0V, Ic = 250pA
Awamcgs/AT Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C VGE = 0V, IO = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.95 2.1 lc = 12A VGE = 15V
- 2.52 - V Ic = 23A See Fig. 2, 5
- 2.09 - Ic= 12A,Tu= 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = Var, lc = 250PA
ge, Forward Transconductance © 3.1 8.6 - S VCE = 100V, Ic = 12A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 2500 I/ss = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ---- 1.4 1.7 V Ic = 12A See Fig. 13
- 1.3 1.6 Ic=12A,Tu=150oC
Kass Gate-to-Emitter Leakage Current - - t100 nA Vss = t20V
Switching Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ---- 5O 75 k; = 12A
Qge Gate - Emitter Charge (turn-on) - 8.1 12 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 18 27 Vss = 15V
tum) Turn-On Delay Time - 40 - TJ = 25°C
tr RiseTime - 21 - ns Ic = 12A, Vcc = 480V
td(off) Turn-Off Delay Time - 91 140 I/ss = 15V, Rs = 23n
t, FalITime ---- 80 130 Energy losses include "tail" and
E0n Turn-On Switching Loss - 0.38 - diode reverse recovery.
Es Turn-Off Switching Loss - 0.16 - ml See Fig. 9, IO, ll, 18
Es Total Switching Loss - 0.54 0.9
td(on) Turn-On Delay Time - 40 - TJ = 150°C, See Fig. 9, 10, ll, 18
tr RiseTime ---- 22 - ns IC = 12A, Vcc = 480V
td(off) Turn-Off Delay Time ---- 120 ---- l/ss = 15V, Rs = 239
If FaIITime - 180 ---- Energy losses include "tail" and
Es Total Switching Loss - 0.89 ---- ml diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = ov
cas Output Capacitance - 73 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f =1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns To = 25''C See Fig.
- 80 120 To = 125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Current - 3.5 6.0 A To = 25°C See Fig.
- 5.6 10 To = 125°C 15 Va = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC TJ = 25°C See Fig.
- 220 600 TJ = 125°C 16 di/dt 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 180 - A/ps To = 25°C See Fig.
During tn - 120 - To =125°C 17
2
