IRG4BC30U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeatures C UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4BC30UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4BC30U-S ,600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4BC30W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.70VCE(on) max.G efficiency of all p ..
IRG4BC30WS ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)applications• Industry-benchmark switching losses improveV = 2.10VCE(on) typ.G efficiency of all p ..
IRG4BC30W-S ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageapplications• Industry-benchmark switching losses improveV = 2.10VCE(on) typ.G efficiency of all p ..
ISO721MDRG4 ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Electrical Characteristics, 3.3 V .... 813.2 Related Links.. 267.9 Power Dissipation........ 813.3 ..
ISO7220AD ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7220ADR ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220BD ,Dual Channel, 2/0, 5Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220BDR ,Dual Channel, 2/0, 5Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7220C ,Dual Channel, 2/0, 25Mbps Digital IsolatorFeaturesbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
IRG4BC30U
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
Internet onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91452E
|RG4BC30U
UltraFast Speed IGBT
Features
. UItraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
q Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-220AB package
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE= 15V, lc--12A
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
Vcss Collector-to-Emitter Breakdown Voltage 600 V
k: © To = 25°C Continuous Collector Current 23
IC @ To = 100°C Continuous Collector Current 12 A
ICM Pulsed Collector Current co 92
u, Clamped Inductive Load Current © 92
V95 Gate-to-Emitter Voltage 1 20 V
EARV Reverse Voltage Avalanche Energy s 10 W
PD @ To = 25°C Maximum Power Dissipation 100 W
PD @ To = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 1 .2
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
Ram Junction-to-Ambient, typical socket mount - 80
Wt Weight 2 (0.07) - g (oz)
1
4/17/2000
IRG4BC30U International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V Vas = 0V, k; = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, k: = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C VGE = 0V, lc =1.0mA
- 1.95 2.1 10:12A VGE=15V
VCE(ON) Collector-to-Emitter Saturation Voltage - 2.52 - V k: = 23A See Fig.2, 5
- 2.09 - IC=12A,TJ=150°C
VGEOh) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas k: = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -13 - ml/PC VCE = VGE, k: = 250pA
ge, Forward Transconductance CO 3.1 8.6 - S VCE = 100V, Ic = 12A
Ices Zero Gate Voltage Collector Current - - 250 pA Vss = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 Vas = 0V, l/cs = 600V, TJ = 150°C
legs Gate-to-Emitter Leakage Current - - 1:100 nA Vas = t20V
Switching Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 50 75 k: = 12A
Qge Gate - Emitter Charge (turn-on) - 8.1 12 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 18 27 VGE = 15V
taon) Turn-On Delay Time - 17 -
tr RiseTime - 9.6 - ns TJ = 25°C
td(off) Turn-Off Delay Time - 78 120 k: = 12A, Vcc = 480V
If FallTime - 97 150 Vas = 15V, Rs = 239
Er,, Turn-On Switching Loss - 0.16 - Energy losses include "tail"
Els, Turn-Off Switching Loss - 0.20 - mJ See Fig. 10, 11, 13, 14
Eis Total Switching Loss - 0.36 0.50
tdwn) Turn-On Delay Time - 20 - TJ = 150°C,
t, RiseTime - 13 - ns k: = 12A, Vcc = 480V
tum) Turn-Off Delay Time - 180 - Vas = 15V, Rs = 239
tf FallTime - 140 - Energy losses include "tail"
EB Total Switching Loss - 0.73 - mJ See Fig. 13, 14
LE Internal Source Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = OV
G, Output Capacitance - 73 - pF Vcc = 30V See Fig.7
Cres Reverse Transfer Capacitance - 14 - f =1.0MHz
Notes:
co Repetitive rating; Vas-- 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs), VGE = 20V, L = 10pH, Rs = 23O, © Pulse width f 80ps; duty factor 3 0.1%.
(See fig. 13a) co Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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