IRG4BC30U-S ,600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4BC30W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.70VCE(on) max.G efficiency of all p ..
IRG4BC30WS ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)applications• Industry-benchmark switching losses improveV = 2.10VCE(on) typ.G efficiency of all p ..
IRG4BC30W-S ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageapplications• Industry-benchmark switching losses improveV = 2.10VCE(on) typ.G efficiency of all p ..
IRG4BC30W-STRL ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageFeatures C• Designed expressly for Switch-Mode PowerV = 600VCES Supply and PFC (power factor corre ..
IRG4BC40F ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB packageFeatures C Fast: optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
ISO7220AD ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7220ADR ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220BD ,Dual Channel, 2/0, 5Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220BDR ,Dual Channel, 2/0, 5Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7220C ,Dual Channel, 2/0, 25Mbps Digital IsolatorFeaturesbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
ISO7220CDR ,Dual Channel, 2/0, 25Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
IRG4BC30U-S
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
International PD-91803
TOR, Rectifier IRG4BC30U-S
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
Features
I UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher eNciency than
Generation 3
. Industry standard D2Pak package
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Breakdown Voltage 600 V
Ic @ To = 25°C Continuous Collector Current 23
Ic @ To = 100°C Continuous Collector Current 12 A
ICM Pulsed Collector Current C) 92
ILM Clamped Inductive Load Current © 92
VGE Gate-to-Emitter Voltage i 20 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
PD @ Tc = 25°C Maximum Power Dissipation 100 W
PD @ Tc = 100°C Maximum Power Dissipation 42
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Ric Junction-to-Case - 1 .2 'C/W
RPA Junction-to-Ambient, ( PCB Mounted/steady-state)' - 40
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
1
IRG4BC30U-S
International
TCPR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-emitter Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage co 18 - - V VGE = 0V, lc = 1.0A
DV(BR)CEs/DTJ Temperature Coeff. of Breakdown Voltage - 0.63 - W'C VGE = 0V, Ic = 1.0mA
- 1.95 2.1 Ic= 12A VGE=15V
VCE(ON) Collector-to-Emitter Saturation Voltage - 2.52 - V lc = 23A See Fig.2, 5
- 2.09 - Ic =12A,TJ = 150°C
1/GEith) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250pA
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, IC = 250pA
gfe Forward Transconductance s 3.1 8.6 - S VCE = 100V, lc = 12A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
- - 1000 VGE = 0V, VCE = 600V, Tu = 150°C
lees Gate-to-Emilie, Leakage Current - - i100 nA VGE = iZOV
Switching Characteristics @ TJ = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 50 75 lc = 12A
Qge Gate - Emitter Charge (turn-on) - 8.1 12 nC Vcc = 400V See Fig.8
090 Gate - Collector Charge (turn-on) - 18 27 VGE = 15V
tam) Turn-On Delay Time - 17 -
tr Rise Time - 9.6 - ns TJ = 25°C
td(off) Turn-Off Delay Time - 78 120 lc = 12A, Vcc = 480V
tf Fall Time - 97 150 VGE = 15V, Rs = 23W
E0n Turn-On Switching Loss - 0.16 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.20 - mJ See Fig. 10, 11, 13, 14
ES Total Switching Loss - 0.36 0.50
td(0n) Turn-On Delay Time - 20 - T: = 150°C,
tr Rise Time - 13 - ns lc = 12A, Vcc = 480V
tum) Turn-Off Delay Time - 180 - VGE = 15V, Rs = 23W
tf Fall Time - 140 - Energy losses include "tail"
Ets Total Switching Loss - 0.73 - mJ See Fig. 13, 14
LE Internal Source Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = 0V
Coes Output Capacitance - 73 - pF Vcc = 30V See Fig.7
Cres Reverse Transfer Capacitance - 14 - f = 1.0MHz
Notes:
co Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b)
Vcc = 80%(VcEs), VGE = 20V, L = 10pH, Rs = 23w,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width E 80ps; duty factors 0.1%.
s Pulse width 5.0us, single shot.
