IRG4BC30S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageFeatures Standard: optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4BC30S-S ,600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak packageFeatures• Standard: optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4BC30S-SPBF ,600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak packageFeatures C Standard: optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4BC30U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeatures C UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4BC30UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4BC30U-S ,600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
ISO721DRG4 ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721DUB ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125Features List From: 4000-V Isolation To: 4000-V Isolation, 560-V V .. 1(peak) (peak) peak IORMChang ..
ISO721DUBR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125 SLLS629L–JANUARY 2006–REVISED OCTOBER 2015• Changed VDE text From: "DIN EN 60747-5-5 (VDE 0884-5)" ..
ISO721MD ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721MDR ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
ISO721MDRG4 ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Electrical Characteristics, 3.3 V .... 813.2 Related Links.. 267.9 Power Dissipation........ 813.3 ..
IRG4BC30S
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
International PD-91593A
ISER Rectifier IRG4BC30S
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
Features c
. Standard: optimized for minimum saturation V V
voltage and low operating frequencies ( < 1kHz) CES = 600
. Generation 4 IGBT design provides tighter
parametgr distribution and higher efficiency than G VCE(on) typ. = 1 .4V
Generation 3
. Industry standard TO-220AB package E @VGE = 15V, lc = 18A
n-channel
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ To = 25°C Continuous Collector Current 34
k: © To = 100°C Continuous Collector Current 18 A
ICM Pulsed Collector Current C) 68
ILM Clamped Inductive Load Current © 68
VGE Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
Pro © To = 25°C Maximum Power Dissipation 100 W
PD @ To = 100°C Maximum Power Dissipation 42
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 Ibfoin (1.1Nom)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case _- 1 .2
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
4/17/2000
International
IRG4BC30S TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, k; = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.75 - VPC VGE = 0V, Ic = 1.0mA
- 1.40 1.6 IC = 18A VGE =15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 1.84 - V k; = 34A See Fig.2, 5
- 1.45 - Ic--18A,Tu=15ty'C
VGEm.) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250pA
AVGEahyATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = Var, Ic = 250pA
ge Forward Transconductance s 6.0 11 - S VCE = 100V, IC = 18A
ICES Zero Gate Voltage Collector Current - - 250 pA Vas = OV, VCE = 600V
- - 2.0 Vas = 0V, ch = 10V, TJ = 25°C
- - 1000 Vss = 0V, Veg = 600V, TJ = 150°C
legs Gate-to-Emi) Leakage Current - - 1100 nA Vss = t20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 50 75 lc = 18A
che Gate - Emitter Charge (turn-on) - 7.3 11 n0 Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 17 26 VGE = 15V
thon) Turn-On Delay Time - 22 -
t, Rise Time - 18 - ns TJ = 25°C
tam) Turn-Off Delay Time - 540 810 k: = 18A, Vcc = 480V
tf Fall Time - 390 590 VGE = 15V, Rs = 23n
Eon Turn-On Switching Loss - 0.26 - Energy losses include "tail"
Est Turn-Off Switching Loss - 3.45 - mJ See Fig. 9, 10, 14
ES Total Switching Loss - 3.71 5.6
tum) Turn-On Delay Time - 21 - Tu = 150°C,
tr Rise Time - 19 - ns k: = 18A, Vcc = 480V
tam) Turn-Off Delay Time - 790 - VGE = 15V, Rs = 23n
t; Fall Time - 760 - Energy losses include "tail"
Ets Total Switching Loss - 6.55 - mJ See Fig. 11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - VGE = 0V
Goes Output Capacitance - 72 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 13 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Vcc = 80%(VCES), l/ss = 20V, L = 10pH, Rs = 239,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width S 80ps; duty factor 3 0.1%.
G) Pulse width 5.0ps, single shot.
