IRG4BC30S-SPBF ,600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak packageFeatures C Standard: optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4BC30U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeatures C UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4BC30UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4BC30U-S ,600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4BC30W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.70VCE(on) max.G efficiency of all p ..
IRG4BC30WS ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)applications• Industry-benchmark switching losses improveV = 2.10VCE(on) typ.G efficiency of all p ..
ISO721DUBR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125 SLLS629L–JANUARY 2006–REVISED OCTOBER 2015• Changed VDE text From: "DIN EN 60747-5-5 (VDE 0884-5)" ..
ISO721MD ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721MDR ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
ISO721MDRG4 ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Electrical Characteristics, 3.3 V .... 813.2 Related Links.. 267.9 Power Dissipation........ 813.3 ..
ISO7220AD ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
ISO7220ADR ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Featuresbalanced signal, then differentiated by the capacitive1• 1, 5, 25, and 150-Mbps Signaling R ..
IRG4BC30S-SPBF
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
International PD-95786A
IEZR Rectifier lRG4BC30S-SPbF
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
Features C
. Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz) VCES = 600V
. Generation 4 IGBT design provides tight
parameter distribution and high efficiency G VCE(on) typ. = 1 .4V
. Lead-Free
E @VGE=15V,IC=18A
n-channel
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
Absolute Maximum Ratings
Parameter Max. Units
Vcss Collector-to-Emitter Breakdown Voltage 600 V
Ic © Tc; = 25°C Continuous CollectorCurrent 34
k: @ Tc = 100°C ContinuousCollectorCurrent 18 A
ICM Pulsed Collector Current © 68
ILM Clamped Inductive Load Current © 68
I/ae Gate-to-Emil/ol; :20 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
PD © To = 25°C Maximum Power Dissipation 100 W
PD © To = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to +150
TSTG StorageTemperature Range (
Soldering Temperature, for 1 0 seconds 300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 2
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RQJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 1 .44 --.- g (oz)
1
02/05/10
IRG4BC30S-SPbF
International
IEER Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmmss Collector-to-emitter-tdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-CollectorBreakdownVoltage® 18 - - V VGE = 0V, ls = 1.0A
AV(BR)CEs/ATJ Temperature Coeff.ofBreakdown Voltage - 0.75 - W'C Vas = 0V, k; = 1.0mA
- 1.40 1.6 Ic=18A Vas=15V
VCE(ON) Collector-to-Em'rtterSaturationVoltage - 1.84 - V Ic = 34A See Fig. 2, 5
- 1.45 - Ic--18A,Tu--150%
VGE(th) GateThresholdVoltage 3.0 - 6.0 VCE = Var, k: = 250pA
AVGE<1h)/ATJ Temperature Ct:yeff. ofThreshold Voltage - -11 - mV/°C VCE = Vas Ic = 250pA
gte FonNardTransoonductance© 6.0 11 - S VCE = 100V, IC = 18A
Ices Zero Gate Voltage CollectorCurrent - - 250 pA VGE = OV, VCE = 600V
- - 2.0 Vas = 0V, VCE = 10V, To = 25°C
- - “DO VGE = 0V, VCE = 600V, To = 150°C
IGES Gate-to-EmitterLeakageCurrent - - 1100 nA VGE = t201/
Switching Characteristics © To = 25°C (unless
otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 TotalGateCharge(turn-on) - 50 75 ls = 18A
Qge Gate - Emitter Charge (turn-on) - 7.3 11 nC Vcc = 400V See Fig. 8
Qgc Gate-CollectorCharge(turn-on) - 17 26 Vas = 15V
tdwn) Turn-On DelayTime - 22 -
tr Rise Time - 18 - ns Tu = 25°C
td(off) Turn-Off Delay Time - 540 810 IC = 18A, Vcc = 480V
tt Fall Time - 390 590 VGE = 15V, Re = 239
Ear, Turn-On Switching Loss - 0.26 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 3.45 - mJ See Fig. 9, IO, 14
Ets Total Switching Loss - 3.71 5.6
td(on) Turn-On DelayTime - 21 - Tu = 150°C,
tr Rise Time - 19 - ns IC = 18A, Vcc = 480V
td(off) Turn-Off Delay Time - 790 - VGE = 15V, Re = 239
tt Fall Time - 760 - Energy losses include "tail"
Ets Total Switching Loss - 6.55 - mJ See Fig. 11, 14
Ls Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies InputCapacitance - 1100 - Vee = 0V
CDes OutputCapacitance - 72 - pF Vcc = 30V See Fig. 7
Cres ReverseTransferCapacitance - 13 - f = 1.0MHz
Notes:
C) Repetitive rating; l/ss = 20V, pulse width limited by
max. junction temperature (See fig. 13b).
© Vcc = 80%(Vcss), l/ss = 20V, L = 10pH, Rs = 23Q, co Pulse width s: 80ps; duty factor s: 0.1%.
(See fig. 13a).
© Repetitive rating; pulse width limited by maximum
junctiontemperature.
S Pulse width 5.0ps, single shot.
