IRG4BC30S-S ,600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak packageFeatures• Standard: optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4BC30S-SPBF ,600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak packageFeatures C Standard: optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4BC30U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeatures C UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4BC30UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switch ..
IRG4BC30U-S ,600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
IRG4BC30W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.70VCE(on) max.G efficiency of all p ..
ISO721DUB ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125Features List From: 4000-V Isolation To: 4000-V Isolation, 560-V V .. 1(peak) (peak) peak IORMChang ..
ISO721DUBR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125 SLLS629L–JANUARY 2006–REVISED OCTOBER 2015• Changed VDE text From: "DIN EN 60747-5-5 (VDE 0884-5)" ..
ISO721MD ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721MDR ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
ISO721MDRG4 ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Electrical Characteristics, 3.3 V .... 813.2 Related Links.. 267.9 Power Dissipation........ 813.3 ..
ISO7220AD ,Dual Channel, 2/0, 1Mbps Digital Isolator 8-SOIC -40 to 125Maximum Ratings table....... 6• Changed in ROC table Max col, V row from VCC to 5.5 . 7IH• Changed ..
IRG4BC30S-S
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
International
TGiR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
I Generation 4 IGBT design provides tight
parameterdistribution and high ethciency
Benefits
PD - 94069
IRG4BC30S-S
Standard Speed IGBT
n-channel
VCES = 600V
VCE(on)typ. = 1.4V
@VGE= 15V, lc-- 18A
. Generation 4 IGBTs offer highest efficiency available
- IGBTs optimized for specified application conditions
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emi/ea/m Voltage 600 V
Ic @ Tc = 25''C Continuous CollectorCurrent 34
k: @ Tc = 100°C Continuous CollectorCurrent 18 A
ICM Pulsed Collector Current C) 68
ILM Clamped Inductive Load Current © 68
VGE Gate-to-EmitterVoltage i20 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
Pro @ Tc = 25''C Maximum PowerDissipation 100 W
PD @ Tc = 100°C Maximum PowerDissipation 42
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 1 0 seconds 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.2
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient, typical socket mount - 40
N Weight 1.44 - g (oz)
1
12/28/00
IRG4BC30S-S 1:itiirgiitig,l
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-EmitterBreakdoanoltage 600 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Coll-Breakdown/alta) 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of BreakdownVoltage - 0.75 - Vl°C VGE = 0V, k: = 1.0mA
- 1.40 1.6 Ic = 18A VGE =15V
VCE(ON) Collector-to-EmitterSaturationVoltage - 1.84 - V Ic = 34A See Fig. 2, 5
- 1.45 - lc=18A,To=150''C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250PA
AVGE(th)/ATJ Temperature Coeff. ofThresholdVoltage - -11 - mWC VCE = VGE, lc = 250PA
gfe FtyWardTransconductanceS 6.0 11 - S VCE = 100V, k: = 18A
ICES Zero Gate Voltage CollectorCurrent - - 250 pA VGE = ov, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
lees Gate-to-EmitterLeakageCurrent - - i100 nA VGE = 120V
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 TotalGateCharge(turn-on) - 50 75 lc = 18A
Qge Gate- EmitterCharge (turn-on) - 7.3 11 M Vcc = 400V See Fig. 8
Qgc Gate-CollectorCharge(turn-on) - 17 26 VGE = 15V
tam) Turn-On Delay Time - 22 -
tr Rise Time - 18 - ns T: = 25''C
tum) Turn-Off Delay Time - 540 810 lc = 18A, Vcc = 480V
tf Fall Time - 390 590 VGE = 15V, Rs = 23n
Eon Turn-On Switching Loss - 0.26 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 3.45 - mJ See Fig. 9, 10, 14
Ets Total Switching Loss - 3.71 5.6
tum") Turn-On Delay Time - 21 - Tu = 150°C,
t, Rise Time - 19 - ns Ic = 18A, Vcc = 480V
tum) Turn-Off Delay Time - 790 - VGE = 15V, Rs = 23n
tf Fall Time - 760 - Energy losses include "tail"
Ets Total Switching Loss - 6.55 - mJ See Fig. 11, 14
Ls Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies InputCapacitance - 1100 - VGE = 0V
Coes OutputCapacitance - 72 - pF Vcc = 30V See Fig. 7
Cres Reverse TransferCapacitance - 13 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature (See fig. 13b).
© Vcc = 80%(VcEs),Vss = 20V, L = 10pH, Rs = 23Q, © Pulse width S 80ps; duty factor S 0.1%.
(See fig. 13a). © Pulse width 5.0ps, single shot.
(3 Repetitive rating; pulse width limited by maximum
junctiontemperature.
2
