IRG4BC30KPBF ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
IRG4BC30K-S ,600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak packageFeaturesC• High short circuit rating optimized for motor control,V = 600V t =10μs, @360V V (star ..
IRG4BC30K-STRR ,600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package Short Circuit Rated UltraFast IGBT
IRG4BC30S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageFeatures Standard: optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4BC30S-S ,600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak packageFeatures• Standard: optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4BC30S-SPBF ,600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak packageFeatures C Standard: optimized for minimum saturationV = 600VCES voltage and low operating freq ..
ISO721DR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
ISO721DRG4 ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721DUB ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125Features List From: 4000-V Isolation To: 4000-V Isolation, 560-V V .. 1(peak) (peak) peak IORMChang ..
ISO721DUBR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125 SLLS629L–JANUARY 2006–REVISED OCTOBER 2015• Changed VDE text From: "DIN EN 60747-5-5 (VDE 0884-5)" ..
ISO721MD ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721MDR ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
IRG4BC30KPBF
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
International
Ttthit, Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
PD - 95641A
llRG4BC30KPbF
Short Circuit Rated
UltraFast IGBT
. High short circuit rating optimized for motor control, C
tsc =10ps, @360V VCE (start), Tu = 125°C, VCES = 600V
VGE = 15V
. Combines low conduction losses with hi h
switching speed g VCE(On) typ. = 2.21V
. Latest generation design provides tighter parameter
distribution and higher etrciency than previous E @VGE = 15V, Ic = 16A
generations
. Lead-Free n-channel
Benefits
. As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for L, f, '
minimum EMI / Noise and switching losses in the "tiii.;''
Diode and IGBT _ S ‘f~-
. Latest generation 4 IGBTs offer highest power N, _,"
density motor controls possible 4
. This part replaces the IRGBCSOK and IRGBC30M
devices TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ To = 25°C Continuous Collector Current 28
Ic @ Tc = 100°C Continuous Collector Current 16 A
ICM Pulsed Collector Current OD 56
ILM Clamped Inductive Load Current © 56
tsc Short Circuit Withstand Time 10 ps
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 260 mJ
PD © To = 25°C Maximum Power Dissipation 100 W
PD © To = 100''C Maximum Power Dissipation 42
T, Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (IAN-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1 .2
Recs Case-to-Sink, Flat, Greased Surface 0.5 - °CNV
RBJA Junction-to-Ambient, typical socket mount - 80
N Weight 1.44 - g
1
02/04/10
|RG4BC30KPbF
International
IEER Rectifier
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.54 - V/°C VGE = 0V, Ic = 1.0mA
- 2.21 - Ic = 14A
VCE(0N) Collector-to-Ender Saturation Voltage - 2.21 2.7 V lc = 16A VGE = Pf
- 2.88 - Ic = 28A See Fig.2, 5
- 2.36 - Ic=16A,TJ=150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/T VCE = VGE, Ic = 250pA
ge, Forward Transconductance s 5.4 8.1 - S VCE = 100V, IC = 16A
- - 250 VGE = 0V, VCE = 600V
Ices Zero Gate Voltage Collector Current - - 2.0 pA VGE = 0V, VCE = lov, To = 25°C
- - 1100 Vas = 0V, VCE = 600V, Tu = 150°C
les Gate-to-Emitter Leakage Current - - 1100 nA VGE = t20V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 67 100 Ic = 16A
Qge Gate - Emitter Charge (turn-on) - 11 16 nC Vcc = 400V See Fig.8
(Ar, Gate - Collector Charge (turn-on) - 25 37 VGE = 15V
tum) Turn-On Delay Time - 26 -
t, Rise Time - 28 - ns Tu = 25°C
td(off) Turn-Off Delay Time - 130 200 lc = 16A, Vcc = 480V
tf FaIITime - 120 170 VGE = 15V, Rc = 239
E0“ Turn-On Switching Loss - 0.36 - Energy losses include "tail"
Es Turn-Off Switching Loss - 0.51 - nd See Fig. 9,10,14
Es Total Switching Loss - 0.87 1.3
u, Short Circuit Withstand Time 10 - - ps Vcc = 400V, T, = 125°C
VGE = 15V, Rs = 239 , VCPK < 500V
td(0n) Turn-On Delay Time - 25 - Tu = 150''C,
tr RiseTime - 29 - k: = 16A, Vcc = 480V
tdm) Turn-Off Delay Time - 190 - ns VGE = 15V, Rs = 239
tt FallTime - 190 - Energy losses include "tail"
Es Total Switching Loss - 1.2 - tttl See Fig. 11,14
Ea, Turn-On Switching Loss - 0.26 - Tu = 25''C, VGE = 15V, Rs = 239
Es Turn-Off Switching Loss - 0.36 - lc = 14A, Vcc = 480V
Et, Total Switching Loss - 0.62 - Energy losses include "tail"
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 920 - VGE = 0V
Cass Output Capacitance - 110 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 27 - f = 1.0MHz
Details of note OD through S are on the last page
