IRG4BC30KD-STRL ,600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak packageFeatures• High short circuit rating optimized for motor control,V = 600VCES t =10μs, @360V V (s ..
IRG4BC30KPBF ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
IRG4BC30K-S ,600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak packageFeaturesC• High short circuit rating optimized for motor control,V = 600V t =10μs, @360V V (star ..
IRG4BC30K-STRR ,600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package Short Circuit Rated UltraFast IGBT
IRG4BC30S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageFeatures Standard: optimized for minimum saturationV = 600VCES voltage and low operating freque ..
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ISO721DR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
ISO721DRG4 ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721DUB ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125Features List From: 4000-V Isolation To: 4000-V Isolation, 560-V V .. 1(peak) (peak) peak IORMChang ..
ISO721DUBR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125 SLLS629L–JANUARY 2006–REVISED OCTOBER 2015• Changed VDE text From: "DIN EN 60747-5-5 (VDE 0884-5)" ..
ISO721MD ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721MDR ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
IRG4BC30KD-S-IRG4BC30KD-STRL
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD -91594C
IRG4BC30KD-S
Short Circuit Rated
UItraFast IGBT
Features
. High short circuit rating optimized for motor control,
tsc =10ps, @360V VCE (start), TJ = 125°C,
VGE = 15V
. Combines low conduction losses with high G
switching speed
. tighter parameter distribution and higher efficiency
than previous generations
. IGBT co-packaged with HEXFREDTM ultrafast,
n-channel
VCES = 600V
@VGE =15V,lc = 16A
ultrasoft recovery antiparallel diodes
Benefits
. Latest generation 4 IGBTs offer highest power
density motor controls possible
. HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristic
reduce noise, EMI and switching losses
. This part replaces the IRGBC30KD2-S and
IRGBC30MD2-S products
. For hints see design tip 97003
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ Tc = 25°C Continuous Collector Current 28
Ic @ To = 100°C Continuous Collector Current 16
ICM Pulsed Collector Current C) 58 A
ILM Clamped Inductive Load Current © 58
IF @ Tc = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 58
tsc Short Circuit 1/Whstand Time 10 us
VGE Gate-to-Emitter Voltage i 20 V
Pro @ To = 25°C Maximum Power Dissipation 100
Pro @ To = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rox: Junction-to-Case - IGBT - 1.2
ReJC Junction-to-Case - Diode 2.5
Recs Case-to-Sink, Flat, Greased Surface 0.5 - ''C/W
ReJA Junction-to-Ambient ( PCB Mounted,steady-state)© - 40
Wt Weight 1.44 - g
1
4/24/2000
International
IRG4BC30KD-S IEZR 'kyctifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltages 600 - - V VGE = 0V, IC = 250pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.54 - V/°C VGE = 0V, Ic = 1.0mA
Vegan) Collector-to-Emitter Saturation Voltage - 2.21 2.7 lc = 16A VGE = 15V
- 2.88 - lc = 28A See Fig. 2, 5
- 2.36 - V k; =16A,T: = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C VCE = VGE, lc = 250pA
Te Forward Transconductance © 5.4 8.1 - S VCE = 100V, Ic = 16A
ICES Zero Gate Voltage Collector Current - - 250 p A VGE = 0V, VCE = 600V
- - 2500 Vss = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V Ic = 12A See Fig. 13
- 1.3 1.6 lc =12A,T: =150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 67 100 Ic = 16A
Qge Gate - Emitter Charge (turn-on) - 11 16 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 25 37 VGE = 15V
Gon) Turn-On Delay Time - 60 -
tr Rise Time - 42 - ns TJ = 25°C
td(ott) Turn-Off Delay Time - 160 250 lc = 16A, Vcc = 480V
tf Fall Time - 80 120 VGE = 15V, Rs = 239
Eon Turn-On Switching Loss - 0.60 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.58 - mJ and diode reverse recovery
Ets Total Switching Loss - 1.18 1.6 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 - - us Vcc = 360V, To = 125°C
VGE = 15V, Rs = lon , VCPK < 500V
tdmn) Turn-On Delay Time - 58 - TJ = 150°C, See Fig. 11,14
tr Rise Time - 42 - ns k: = 16A, Vcc = 480V
td(off) Turn-Off Delay Time - 210 - VGE = 15V, Rs = 239
tf Fall Time - 160 - Energy losses include "tail"
Ets Total Switching Loss - 1.69 - mJ and diode reverse recovery
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 920 - VGE = 0V
Goes Output Capacitance - 110 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 27 - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns T: = 25°C See Fig.
- 80 120 TJ = 125°C 14 IF = 12A
lrr Diode Peak Reverse Recovery Current - 3.5 6.0 A TJ = 25°C See Fig.
- 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC TJ = 25°C See Fig.
- 220 600 TJ = 125°C 16 di/dt = 200Aps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 180 - Alps T: = 25°C See Fig.
During tn - 160 - TJ = 125°C 17
2
