IRG4BC30KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packagePD -91595AIRG4BC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFA ..
IRG4BC30KDPBF ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4BC30KD-S ,600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak packagePD -91594CIRG4BC30KD-S Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRA ..
IRG4BC30KD-STRL ,600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak packageFeatures• High short circuit rating optimized for motor control,V = 600VCES t =10μs, @360V V (s ..
IRG4BC30KPBF ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
IRG4BC30K-S ,600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak packageFeaturesC• High short circuit rating optimized for motor control,V = 600V t =10μs, @360V V (star ..
ISO721DR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
ISO721DRG4 ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721DUB ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125Features List From: 4000-V Isolation To: 4000-V Isolation, 560-V V .. 1(peak) (peak) peak IORMChang ..
ISO721DUBR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125 SLLS629L–JANUARY 2006–REVISED OCTOBER 2015• Changed VDE text From: "DIN EN 60747-5-5 (VDE 0884-5)" ..
ISO721MD ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721MDR ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
IRG4BC30KD-IRG4BC30KDPBF
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
PD -91595A
International
TOR Rectifier IRG4BC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT
Features C
. High short circuit rating optimized for motor control, VCES = 600V
tsc =10ps, @360V VCE (start), T: = 125°C,
VGE = 15V
. Combines low conduction losses with high
switching speed
. tighter parameter distribution and higher efficiency than
previous generations
I IGBT co-packaged with HEXFREDTM ultrafast, n-ch a n n el
ultrasoft recovery antiparallel diodes
Benefits
. Latest generation 4 IGBTs offer highest power density
motor controls possible
. HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
. This part replaces the IRGBC30KD2 and IRGBC30MD2
E @VGE = 15V, Ic = 16A
products
. For hints see design tip 97003 TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 28
lc @ Tc = 100°C Continuous Collector Current 16
ICM Pulsed Collector Current OD 58 A
ILM Clamped Inductive Load Current © 58
IF @ To = 100°C Diode Continuous Fon/vard Current 12
IFM Diode Maximum Forward Current 58
tsc Short Circuit VWthstand Time 10 ps
VGE Gate-to-Emitter Voltage 1 20 V
Pro @ Tc = 25''C Maximum Power Dissipation 100
Pro @ Tc = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibfoin (1.1 tom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rsuc Junction-to-Case - IGBT - - 1.2
ReJC Junction-to-Case - Diode - - 2.5 ''CA/V
Recs Case-to-Sink, flat, greased surface - 0.50 -
ReJA Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2 (0.07) - g (oz)
1
4/24/2000
International
IRG4BC30KD TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage© 600 - - V VGE = 0V, Ic = 250pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.54 - V/°C VGE = 0V, lc = 1.0mA
VCEM) Collector-to-Emitter Saturation Voltage - 2.21 2.7 Ic = 16A VGE = 15V
- 2.88 - V Ic = 28A See Fig. 2, 5
- 2.36 - k: = 16A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C VCE = VGE, Ic = 250PA
gfe Forward Transconductance © 5.4 8.1 - S VCE = 100V, Ic = 16A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 2500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V Ic = 12A See Fig. 13
- 1.3 1.6 l: =12A,Tu =150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 67 100 Ic = 16A
Qge Gate - Emitter Charge (turn-on) - 11 16 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 25 37 VGE = 15V
tdwn) Turn-On Delay Time - 60 -
t, Rise Time - 42 - ns To = 25°C
tum) Turn-Off Delay Time - 160 250 Ic = 16A, Vcc = 480V
tf Fall Time - 80 120 VGE = 15V, Rs = 230
Eon Turn-On Switching Loss - 0.60 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.58 - mJ and diode reverse recovery
G Total Switching Loss - 1.18 1.6 See Fig. 9,10,14
tsc Short Circuit Wlthstand Time 10 - - us Vcc = 360V, To = 125°C
VGE = 15V, Rs = lon , VCPK < 500V
td(on) Turn-On Delay Time - 58 - TJ = 150°C, See Fig. 11,14
tr Rise Time - 42 - ns Ic = 16A, Vcc = 480V
tum) Turn-Off Delay Time - 210 - VGE = 15V, Rs = 23n
tr Fall Time - 160 - Energy losses include "tail"
G Total Switching Loss - 1.69 - ml and diode reverse recovery
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 920 - VGE = 0V
Coes Output Capacitance - 110 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 27 - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns To = 25°C See Fig.
- 80 120 To =125°C 14 IF = 12A
lrr Diode Peak Reverse Recovery Current - 3.5 6.0 A To = 25°C See Fig.
- 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC T J = 25°C See Fig.
- 220 600 To = 125°C 16 di/dt = 200Aps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 180 - Alps To = 25°C See Fig.
During tr, - 160 - To = 125°C 17
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