IRG4BC30K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB packageFeaturesC High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (s ..
IRG4BC30KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packagePD -91595AIRG4BC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFA ..
IRG4BC30KDPBF ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4BC30KD-S ,600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak packagePD -91594CIRG4BC30KD-S Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRA ..
IRG4BC30KD-STRL ,600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak packageFeatures• High short circuit rating optimized for motor control,V = 600VCES t =10μs, @360V V (s ..
IRG4BC30KPBF ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
ISO485P ,Isolated RS-485 DIFFERENTIAL BUS TRANSCEIVER
ISO721DR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
ISO721DRG4 ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721DUB ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125Features List From: 4000-V Isolation To: 4000-V Isolation, 560-V V .. 1(peak) (peak) peak IORMChang ..
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ISO721MD ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
IRG4BC30K
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. High short circuit rating optimized for motor control,
tsc=10us, @360V VCE (start), TJ = 125°C,
VGE = 15V
. Combines low conduction losses with high
switching speed
. Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
Benefits
PD - 91596A
IRG4BC30K
Short Circuit Rated
UItraFast IGBT
VCES = 600V
E @VGE =15V,lc =16A
n-channel
. As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
. Latest generation 4 IGBTs offer highest power
density motor controls possible
. This part replaces the IRGBC30K and IRGBC30M
devices TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 28
lc @ Tc = 100°C Continuous Collector Current 16 A
ICM Pulsed Collector Current OD 58
ILM Clamped Inductive Load Current © 58
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emitter Voltage A20 V
EARV Reverse Voltage Avalanche Energy © 260 m]
Po @ Tc = 25°C Maximum Power Dissipation 100 W
Po @ Tc = 100°C Maximum Power Dissipation 42
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
R9JC Junction-to-Case - 1.2
Recs Case-to-Sink, Flat, Greased Surface 0.5 - "CM/
RQJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 1.44 - g
1
4/24/2000
International
IRG4BC30K TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V I/ss = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage Ci) 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CESIATJ Temperature Coeff. of Breakdown Voltage - 0.54 - V/°C VGE = 0V, Ic = 1.0mA
- 2.21 - Ic = 14A
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.21 2.7 V lc = 16A VGE - fl/
- 2.88 - Ic = 28A See Fig.2, 5
- 2.36 - Ic= 16A,To= 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mWC VCE = VGE, k: = 250pA
gre Forward Transconductanoe S 5.4 8.1 - S VCE = 100V, k: = 16A
- - 250 VGE = 0V, VCE = 600V
Ices Zero Gate Voltage Collector Current - - 2.0 pA VGE = 0V, VCE = 10V, TJ = 25°C
- - 1 100 VGE = 0V, VCE = 600V, To = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = :20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
q, Total Gate Charge (turn-on) - 67 100 lc = 16A
qr, Gate - Emitter Charge (turn-on) - 11 16 n0 Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 25 37 VGE = 15V
tdon) Turn-On Delay Time - 26 -
tr RiseTime - 28 - ns T: = 25°C
tam) Turn-Off Delay Time - 130 200 lc = 16A, Vcc = 480V
tf FallTime - 120 170 Vse = 15V, Rs = 23n
Err, Turn-On Switching Loss - 0.36 - Energy losses include "tail"
' Turn-Off Switching Loss - 0.51 - ml See Fig. 9,10,14
EU Total Switching Loss - 0.87 1.3
tsc Short Circuit VWthstand Time 10 - - ps Vcc = 400V, To = 125°C
VGE = 15V, Rs = 23n , VCPK < 500V
tam) Turn-On Delay Time - 25 - TJ = 150°C,
tr RiseTime - 29 - k: = 16A, Vcc = 480V
tdm Turn-Off Delay Time - 190 - ns VGE = 15V, Rs = 23f2
tr FallTime - 190 - Energy losses include "tail"
EU Total Switching Loss - 1.2 - mJ See Fig. 11,14
E0n Turn-On Switching Loss - 0.26 - TJ = 25°C, VGE = 15V, Rs = 239
' Turn-Off Switching Loss - 0.36 - k: = 14A, Vcc = 480V
EU Total Switching Loss - 0.62 - Energy losses include "tail"
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 920 - VGE = 0V
G, Output Capacitance - 110 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 27 - f=1.0MHz
Details of note CD through S are on the last page
