IRG4BC30K-S ,600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak packageFeaturesC• High short circuit rating optimized for motor control,V = 600V t =10μs, @360V V (star ..
IRG4BC30K-STRR ,600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package Short Circuit Rated UltraFast IGBT
IRG4BC30S ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageFeatures Standard: optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4BC30S-S ,600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak packageFeatures• Standard: optimized for minimum saturationV = 600VCES voltage and low operating freque ..
IRG4BC30S-SPBF ,600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak packageFeatures C Standard: optimized for minimum saturationV = 600VCES voltage and low operating freq ..
IRG4BC30U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeatures C UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard swit ..
ISO721DR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
ISO721DRG4 ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721DUB ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125Features List From: 4000-V Isolation To: 4000-V Isolation, 560-V V .. 1(peak) (peak) peak IORMChang ..
ISO721DUBR ,2.5 kVrms, 100 Mbps, 1-Channel Digital Isolator 8-SOP -40 to 125 SLLS629L–JANUARY 2006–REVISED OCTOBER 2015• Changed VDE text From: "DIN EN 60747-5-5 (VDE 0884-5)" ..
ISO721MD ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125Featuresμs, the input is assumed to be unpowered or not1• 100 and 150-Mbps Signaling Rate Optionsbe ..
ISO721MDR ,Single 150Mbps Digital Isolator 8-SOIC -40 to 125features of the ISO721M device also provide forreduced-jitter operation.– Smart Distributed Systems ..
IRG4BC30K-S-IRG4BC30K-STRR
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
International PD-91619B
ISER Rectifier IRG4BC30K-S
Short Circuit Rated
INSULATED GATE BIPOLAR TRANSISTOR UItraFast IGBT
Features c
. High short circuit rating optimized for motor control,
tsc=10ps, @360V VCE (start), T J = 125°C, VCES = 600V
VGE = 15V
. Combines low conduction losses with high VCE(on) typ. = 2.21V
switching speed G
. Latest generation design provides tighter parameter
distribution and higher efficiency than previous E
generations n -cha n n el
@VGE =15V,lc = 16A
Benefits
. As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
. Latest generation 4 IGBTs offer highest power
density motor controls possible
. This part replaces the |RGBC30K-S and
IRGBC30M-S devices
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Io @ Tc = 25°C Continuous Collector Current 28
IC @ Tc = 100°C Continuous Collector Current 16 A
ICM Pulsed Collector Current OD 58
ILM Clamped Inductive Load Current © 58
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emitter Voltage $20 V
EARV Reverse Voltage Avalanche Energy © 260 m]
PD @ Tc = 25°C Maximum Power Dissipation 100 W
Po @ Tc = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to +150
Tsms Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rox: Junction-to-Case - 1 .2
Recs Case-to-Sink, Flat, Greased Surface 0.5 - ''CIW
ReuA Junction-to-Ambient ( PCB Mounted/steady-state)') - 40
Wt Weight 1.44 - g
1
4/24/2000
International
IRG4BC30K-S IEZR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CESIATJ Temperature Coeff. of Breakdown Voltage - 0.54 - V/°C VGE = 0V, lc = 1.0mA
- 2.21 - Ic = 14A
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.21 2.7 V k: = 16A VGE = 15V
- 2.88 - Ic = 28A See Fig.2, 5
- 2.36 - Ic=16A,TJ=150°C
Vegan) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mVfC VCE = VGE, Ic = 250pA
gfe Forward Transconductance (9 5.4 8.1 - S VCE = 100V, lc = 16A
- - 250 VGE = 0V, VCE = 600V
Ices Zero Gate Voltage Collector Current - - 2.0 pA VGE = 0V, VCE = 10V, Tu = 25°C
- - 1100 VGE = 0V, VCE = 600V, To = 150°C
Kas Gate-to-Emir-ees Current - - 1100 nA VGE = i20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
0.9 Total Gate Charge (turn-on) - 67 100 Ic = 16A
Qge Gate - Emitter Charge (turn-on) - 11 16 nC Vcc = 400V See Fig.8
Ac Gate - Collector Charge (turn-on) - 25 37 V35 = 15V
td(on) Turn-On Delay Time - 26 -
tr Rise Time - 28 - ns To = 25°C
tum) Turn-Off Delay Time - 130 200 IC = 16A, Vcc = 480V
tf FallTime - 120 170 VGE = 15V, Rs = 239
Eon Turn-On Switching Loss - 0.36 - Energy losses include "tail"
Er,, Turn-Off Switching Loss - 0.51 - mJ See Fig. 9,10,14
Es Total Switching Loss - 0.87 1.3
tsc Short Circuit 1Mthstand Time 10 - - us Vcc = 400V, TJ = 125°C
VGE = 15V, Rs = 23n , VCPK < 500V
td(on) Turn-On Delay Time - 25 - To = 150°C,
tr RiseTime - 29 - Ic = 16A, Vcc = 480V
tam Turn-Off Delay Time - 190 - ns VGE = 15V, Rs = 239
tf FallTime - 190 - Energy losses include "tail"
Els Total Switching Loss - 1.2 - mJ See Fig. 11,14
Eon Turn-On Switching Loss - 0.26 - To = 25°C, VGE = 15V, Rs = 23n
Er,, Turn-Off Switching Loss - 0.36 - mJ Ic = 14A, Vcc = 480V
Es Total Switching Loss - 0.62 - Energy losses include "tail"
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 920 - VGE = 0V
Coes Output Capacitance - 110 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 27 - f = 1.0MHz
Details of note C) through co are on the last page
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