IRG4BC30FDS ,600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package IRG4BC30FD-SPbFFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODE ..
IRG4BC30FD-S ,600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package IRG4BC30FD-SPbFFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODE ..
IRG4BC30K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB packageFeaturesC High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (s ..
IRG4BC30KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packagePD -91595AIRG4BC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFA ..
IRG4BC30KDPBF ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4BC30KD-S ,600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak packagePD -91594CIRG4BC30KD-S Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRA ..
ISO3082DWR ,2.5 kVrms Isolated 5 V Half-Duplex RS-485 Transceiver 16-SOIC -40 to 85Maximum Ratings... 5STG• Added "Dynamic" conditions to Recommended Operating Conditions V spec with ..
ISO3086DWR ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3088DW ,Isolated 5-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3088DWR ,Isolated 5-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
ISO35DW ,Isolated 3.3-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO15 is an isolated half-duplex differential line1• Meets or Exceeds TIA ..
ISO485P ,Isolated RS-485 DIFFERENTIAL BUS TRANSCEIVER
IRG4BC30FDS-IRG4BC30FD-S
600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package
International I
Titat Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFASTDIODE
Features
. Fast: optimized for medium operating Frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3.
. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft
recovery anti-parallel diodes for use in bridge configurations.
. Lead-Free
Benefits
. Generation 4 IGBT's offer highest efficiency available.
. IGBT's optimized for specific application conditions.
. HEXFRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less/no
snubbing.
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's.
Absolute Maximum Ratings
PD - 95970A
RG4BC30FD-SPbF
Fast Co Pack IG BT
VCES = 600V
@VGE =15V, k: = 17A
Parameter Max. Units
Vcas Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 31
Ic @ Tc = 100°C Continuous Collector Current 17 A
Ics, Pulse Collector Current (Ref.Fig.C.T.5) CD 124
G, Clamped Inductive Load current © 124
V @ To = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 120
l/ss (3ate-to-Emitter Voltage t20 V
PD @ To = 25°C Maximum Power Dissipation 100 W
Pro @ To = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150 I
Tsm Storage Temperature Range
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
ROJC Junction-to-Case- IGBT - - 1.2 °CNV
Recs Case-to-Sink, flat, greased surface - 0.50 -
ROJA Junction-to-Ambient (PCB Mounted,steady state)S - - 40
Wt Weight - 2.0 (0.07) - g (oz.)
1
01/27/10
IRG4BC30FD-SPbF International
TOR Rectifier
Electrical Characteristics © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage © 600 - - V VGE = 0V, lc = 250pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.69 - V/°C Vss = 0V, IC = 1mA
- 1.59 1.8 Ic=17A VGE=15V
VCE(on) Collector-to-Emitter Voltage - 1.99 - V Ic = 31A See Fig. 2, 5
- 1.7 - lc=17A,TJ=150°C
VGEuh) Gate Threshold Voltage 3.0 - 6.0 V l/cs = VGE, IC = 250pA
AVGEW/ATJ Threshold Voltage temp. coefficient - -11 - mV/°C VCE = VGE, IC = 250PA
gfe Forward Transconductance © 6.1 10 - S VCE = 100V, Ic: = 17A
Ices Zero Gate Voltage Collector Current - - 250 PA l/ss = 0V, VCE = 600V
- - 2500 VGE = 0V, VCE = 600V, T, = 150°C
I/m Diode Forward Voltage Drop - 1.4 1.7 V IF = 12A See Fig. 13
- 1.3 1.6 |F=12A,TJ=150°C
lees Gate-to-Emitter Leakage Current - - 1100 nA VGE = t20V
Switching Characteristics @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 51 77 Ic = 17A
Qge Gate-to-Emitter Charge (turn-on) - 7.9 12 nC Vcc = 400V See Fig. 8
Qgc Gate-to-Collector Charge (turn-on) - 19 28 l/se = 15V
Lion) Turn-On delay time - 42 - TJ = 25°C
t, Rise time - 26 - ns Ic = 17A, Vcc = 480V
td(off) Turn-Off delay time - 230 350 VGE = 15V, Ra = 239
t: Fall time - 160 230 Energy losses inlcude "tail" and
Eo,, Turn-On Switching Loss - 0.63 - diode reverse recovery.
Es, Turn-Off Switching Loss - 1.39 - mJ See Fig. 9, IO, 11, 18
Ets Total Switching Loss - 2.02 3.9
tam) Turn-On delay time - 42 - TJ = 150°C See Fig. 9,10,11,18
t, Rise time - 27 - ns Ic = 17A, Vcc = 480V
td(off) Turn-Off delay time - 310 - I/ss = 15V, Rs = 239
t, Fall time - 310 - Energy losses inlcude "tail" and
ES Total Switching Loss - 3.2 - mJ diode reverse recovery.
Ls Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - Vas = 0V
Coes Output Capacitance - 74 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f = 1 .OMHz
trr Diode Reverse Recovery Time - 42 60 ns TJ = 25°C See Fig.
- 80 120 TJ = 125°C 14 IF =12A
rr Diode Peak Reverse Recovery Current - 3.5 6.0 A To = 25°C See Fig.
- 5.6 10 TJ = 125°C 15 Va = 200V
a,, Diode Reverse Recovery Charge - 80 180 no TJ = 25°C See Fig.
220 600 TJ = 125°C 16 di/dt 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 180 - Alps TJ = 25°C See Fig.
During tr, - 120 - To = 125°C 17
2
