IRG4BC30FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220AB packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4BC30FDS ,600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package IRG4BC30FD-SPbFFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODE ..
IRG4BC30FD-S ,600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package IRG4BC30FD-SPbFFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODE ..
IRG4BC30K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB packageFeaturesC High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (s ..
IRG4BC30KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packagePD -91595AIRG4BC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFA ..
IRG4BC30KDPBF ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
ISO3082DWR ,2.5 kVrms Isolated 5 V Half-Duplex RS-485 Transceiver 16-SOIC -40 to 85Maximum Ratings... 5STG• Added "Dynamic" conditions to Recommended Operating Conditions V spec with ..
ISO3086DWR ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3088DW ,Isolated 5-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3088DWR ,Isolated 5-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
ISO35DW ,Isolated 3.3-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO15 is an isolated half-duplex differential line1• Meets or Exceeds TIA ..
ISO485P ,Isolated RS-485 DIFFERENTIAL BUS TRANSCEIVER
IRG4BC30FD
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
PD -91451B
IRG4BC30FD
Fast CoPack IGBT
International
IEER Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features C
. Fast: Optimized for medium operating " VCES = 600V
frequencies ( 1-5 kHz in hard switching, >20 f
kHz in resonant mode). fs. TN -
. Generation 4 IGBT design provides tighter G VCE(°”) typ. - 1.59V
parameter distribution and higher efficiency than
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
. Industry standard TO-220AB package
E @VGE = 15V, IC = 17A
n-channel
Benefits "eT1
I Generation -4 IGBT's offer highest emciencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600
Ic @ To = 25°C Continuous Collector Current 31
Ic @ Tc = 100°C Continuous Collector Current 17
ICM Pulsed Collector Current co 120
ILM Clamped Inductive Load Current © 120
IF @ Tc = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emir Voltage 1 20
PD @ To = 25°C Maximum Power Dissipation 100
Pry @ Tc = 100°C Maximum Power Dissipation 42
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 1O Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Roc Junction-to-Case - IGBT ------------ 1.2
Ric Junction-to-Case - Diode ---_ 2.5 °C/W
chs Case-to-Sink, flat, greased surface ------ 0.50 ------
RSA Junction-to-Ambient, typical socket mount ---------- 80
IM Weight ------ 2 (0.07) ------ g (oz)
1
12/8/98
IRG4BC30FD
International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi) Breakdown Voltages 600 ---- ---- V VGE = 0V, Ic = 250pA
DV(BR)CE3/DTJ Temperature Coeff. of Breakdown Voltage ---- 0.69 ---- V/°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emi) Saturation Voltage - 1.59 1.8 Ic = 17A VGE = 15V
---- 1.99 ---- V Ic = 31A See Fig. 2, 5
---- 1.70 ---- lc = 17A, To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mW'C VCE = VGE, IC = 250pA
gfe Forward Transconductance co 6.1 10 ---- S VCE = 100V, lc = 17A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
---- ---- 2500 VGE = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 12A See Fig. 13
- 1.3 1.6 Io =12A,TJ = 150°C
IGEs Gate-to-Emitter Leakage Current ---- ---- i100 nA VGE = -+20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
q, Total Gate Charge (turn-on) ---- 51 77 Ic = 17A
Qge Gate - Emitter Charge (turn-on) ---- 7.9 12 n0 Vcc = 400V See Fig. 8
090 Gate - Collector Charge (turn-on) - 19 28 VGE = 15V
td(on) Turn-On Delay Time ---- 42 ---- Tu = 25°C
tr Rise Time ---- 26 ---- ns lc = 17A, Vcc = 480V
tam) Turn-Off Delay Time - 230 350 VGE = 15V, Rs = 23w
tf FaIITime ---- 160 230 Energy losses include "tail" and
Eon Turn-On Switching Loss ---- 0.63 ---- diode reverse recovery.
Eur Turn-Off Switching Loss ---- 1.39 ---- mJ See Fig. 9, 10, 11, 18
Es Total Switching Loss ---- 2.02 3.9
td(on) Turn-On Delay Time ---- 42 ---- Tu = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 27 - ns Ic = 17A, Vcc = 480V
tdw) Turn-Off Delay Time ---- 310 ---- VGE = 15V, Rs = 23w
tf FaIITime ---- 310 ---- Energy losses include "tail" and
Ets Total Switching Loss - 3.2 - tttl diode reverse recovery.
LE Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 1100 ---- VGE = 0V
Goes Output Capacitance - 74 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 14 ---- f = 1.0MHz
trr Diode Reverse Recovery Time ---- 42 60 ns T: = 25°C See Fig.
- 80 120 TJ = 125°C 14 IF = 12A
lrr Diode Peak Reverse Recovery Current ---- 3.5 6.0 A Tu = 25°C See Fig.
---- 5.6 10 TJ = 125°C 15 VR = 200V
G, Diode Reverse Recovery Charge - 80 180 nC Tu = 25''C See Fig.
---- 220 600 TJ = 125°C 16 di/dt 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 180 ---- Alps Tu = 25°C See Fig.
During tr, ---- 120 - Tu = 125°C 17
2
