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IRG4BC30F
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
Internet onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 914508
IRG4BC30F
Fast Speed IGBT
Features
. Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-220AB package
n-channel
VCES = 600V
VCE(on) typ. = 1.59V
@VGE =15V, IQ = 17A
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max Units
Vcss Collector-to-Emitter Breakdown Voltage 600 V
k: @ To = 25°C Continuous Collector Current 31
IC @ To = 100°C Continuous Collector Current 17 A
ICM Pulsed Collector Current C) 120
ILM Clamped Inductive Load Current © 120
Vss Gate-to-Emitter Voltage 1 20 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
PD © To = 25°C Maximum Power Dissipation 100 W
PD @ To = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .2
Recs Case-to-Sink, Flat, Greased Surface 0.5 - °C/W
RQJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
4/17/2000
IRG4BC30F International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmmas Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(Bmgcs Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.69 - V/°C Vas = 0V, Ic = 1.0mA
- 1.59 1.8 IC = 17A VGE =15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 1.99 - V Ic = 31A See Fig.2, 5
- 1.7 - lc--17A,Tsj--1500C
Vss(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, lc = 250pA
ge, Forward Transconductance s 6.1 10 - S VCE = 100V, k; = 17A
Ices Zero Gate Voltage Collector Current - - 250 pA l/ss = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-to-Emitter Leakage Current - - i100 nA Vas = :20V
Switching Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 51 77 IC = 17A
099 Gate - Emitter Charge (turn-on) - 7.9 12 nC Vcc = 400V See Fig. 8
099 Gate - Collector Charge (turn-on) - 19 28 V95 = 15V
tam) Turn-On Delay Time - 21 -
t, Rise Time - 15 - ns Tu = 25°C
td(off) Turn-Off Delay Time - 200 300 IC = 17A, Vcc = 480V
tf Fall Time - 180 270 Vas = 15V, RG = 239
Eon Turn-On Switching Loss - 0.23 - Energy losses include "tail"
Est Turn-Off Switching Loss - 1.18 - mJ See Fig. IO, 11, 13, 14
Ee Total Switching Loss - 1.41 2.0
tum) Turn-On Delay Time - 20 - T: = 150°C,
tr Rise Time - 16 - ns Ic = 17A, Vcc = 480V
td(off) Turn-Off Delay Time - 290 - VGE = 15V, Rs = 239
t: Fall Time - 350 - Energy losses include "tail"
Ets Total Switching Loss - 2.5 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1100 - I/SE = 0V
Goes Output Capacitance - 74 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VCEs), Vss = 20V, L = 10pH, Re = 23f2, © Pulse width 3 80ps; duty factor 3 0.1%.
(See fig. 13a) s Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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