IRG4BC20WS ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)applications• Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
IRG4BC20W-S ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageapplications• Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
IRG4BC30 ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
IRG4BC30F ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB packageFeatures C Fast: optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
IRG4BC30FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220AB packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4BC30FDS ,600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package IRG4BC30FD-SPbFFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODE ..
ISO3080DWR ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Maximum Ratings... 5STG• Added "Dynamic" conditions to Recommended Operating Conditions V spec with ..
ISO3082 ,Isolated 5-V Full-Duplex RS-485 TransceiversElectrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
ISO3082DW ,2.5 kVrms Isolated 5 V Half-Duplex RS-485 Transceiver 16-SOIC -40 to 85Electrical Characteristics: Driver... 7I CCI• Changed top row, UNIT column, split into 2 rows, top ..
ISO3082DW ,2.5 kVrms Isolated 5 V Half-Duplex RS-485 Transceiver 16-SOIC -40 to 85Features 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3082DWR ,2.5 kVrms Isolated 5 V Half-Duplex RS-485 Transceiver 16-SOIC -40 to 85Maximum Ratings... 5STG• Added "Dynamic" conditions to Recommended Operating Conditions V spec with ..
ISO3086DWR ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
IRG4BC20WS
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
International
IeaR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
. Industry-benchmark switching losses improve
efMiency of all
. 50% reduction of Eoff parameter
. Low IGBT cond
. Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
PD - 94076
IRG4BC20W-S
power supply topologies
uction losses
N-channel
VCES = 600V
@VGE = 15V, lc = 6.5A
. Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150kHz
("hard switched" mode)
. Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
. Low conduction
losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300kHz)
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 13
Ic @ Tc = 100°C Continuous Collector Current 6.5 A
ICM Pulsed Collector Current (D 52
ILM Clamped Inductive Load Current C) 52
l/GE Gate-to-Emitter Voltage , 20 V
EARV Reverse Voltage Avalanche Energy © 200 mJ
Po @ Tc = 25°C Maximum Power Dissipation 60 W
PD @ Tc = 100°C Maximum Power Dissipation 24
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.5 - °CNV
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 1.44 - g (oz)
1
5/24/00
International
IRG4BC20W-S TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
V(BR)CES Collector-to-Ether Breakdown Voltage 600 - - V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, k: = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.48 - V/°C l/ss = 0V, Ic = 1.0mA
- 2.16 2.6 Ic=6.5A VGE=15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.55 - V lc = 13A See Fig.2, 5
- 2.05 - Ic = 6.5A , To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -8.8 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 5.5 8.3 - S VCE = 100 V, Ic = 6.5A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, To = 25°C
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
legs Gate-to-Emilie, Leakage Current - - i100 nA VGE = EBYN
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 26 38 lc = 6.5A
Qge Gate - Emitter Charge (turn-on) - 3.7 5.5 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 10 15 VGE = 15V
tdmn) Turn-On Delay Time - 22 -
tr Rise Time - 14 - ns T: = 25°C
tdiott) Turn-Off Delay Time - 110 160 10 = 6.5A, Vcc = 480V
tf Fall Time - 64 96 VGE = 15V, Rs = 50n
Eon Turn-On Switching Loss - 0.06 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.08 - mJ See Fig. 9, 10, 14
Ets Total Switching Loss - 0.14 0.2
tum”) Turn-On Delay Time - 21 - Tu = 150°C,
tr Rise Time - 15 - ns lc = 6.5A, Vcc = 480V
tum) Turn-Off Delay Time - 150 - VGE = 15V, Rs = 50n
tr Fall Time - 150 - Energy losses include "tail"
Ets Total Switching Loss - 0.34 - mJ See Fig. 10, 11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 490 - VGE = 0V
Coes Output Capacitance - 38 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 8.8 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by © Pulse width S 80ps; duty factor f 0.1%.
max. junction temperature. (See Fig. 13b)
Vcc = 80%(VcEs), Vas = 20V, L = 10pH, Rs = 509,
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
s Pulse width 5.0ps, single shot.
