IRG4BC20WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
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IRG4BC20WPBF
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
International
1ng (iuctifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
. Industry-benchmark switching losses improve
efficiency of all
. 50% reduction of Eoff parameter
. Low IGBT conduction losses
. Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
. Lead-Free
Benefits
PD-9564OA
|RG4BC20WPbF
power supply topologies
n-channel
VCES = 600V
@VGE = 15V, k: = 6.5A
. Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
. Of particular beneht to single-ended converters and
boost PFC topologies 150W and higher
. Low conduction
losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-22OAB
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Breakdown Voltage 600 V
Ic tp Tc = 25''C Continuous Collector Current 13
k: tt Tc = 100°C Continuous Collector Current 6.5 A
ICM Pulsed Collector Current OD 52
ILM Clamped Inductive Load Current © 52
Vse Gate-to-emitter Voltage , 20 V
EARV Reverse Voltage Avalanche Energy © 200 mJ
PD @ To = 25°C Maximum Power Dissipation 60 W
Pro @ Tc = 100°C Maximum Power Dissipation 24
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rout: Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.5 - “CNV
ReJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
01/25/10
http://www.datas
heetcataloq.com/
|RG4BC20WPbF
International
IEER Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, IC = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage (9 18 - - V VGE = 0V, k: = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.48 - V/°C VGE = 0V, Ic = 1.0mA
- 2.16 2.6 Ic = 6.5A VGE = 15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 2.55 - V Ic = 13A See Fig.2, 5
- 2.05 - Ic = 6.5A t TJ = 150°C
VGEM Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -8.8 - mV/°C VCE = VGE, Ic = 250PA
ge, Forward Transconductance s 5.5 8.3 - S VCE = 100 V, lc = 6.5A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, TJ = 25''C
- - 1000 VGE = 0V, VCE = 600V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 26 38 IC = 6.5A
Qge Gate - Emitter Charge (turn-on) - 3.7 5.5 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 10 15 VGE = 15V
td(on) Turn-On Delay Time - 22 -
tr Rise Time - 14 - ns Tu = 25°C
tum) Turn-Off Delay Time - 110 160 Ic = 6.5A, Vcc = 480V
tf Fall Time - 64 96 VGE = 15V, Rs = 509
E0n Turn-On Switching Loss - 0.06 - Energy losses include "tail"
Es, Turn-Off Switching Loss - 0.08 - mJ See Fig. 9, 10, 14
G Total Switching Loss - 0.14 0.2
td(on) Turn-On Delay Time - 21 - TJ = 150°C,
tr Rise Time - 15 - ns Ic = 6.5A, Vcc = 480V
List) Turn-Off Delay Time - 150 - VGE = 15V, Rs = 509
tf Fall Time - 150 - Energy losses include "tail"
G Total Switching Loss - 0.34 - mJ See Fig. 10, 11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 490 - VGE = 0V
Coes Output Capacitance - 38 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 8.8 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VCE3), VGE = 20V, L = 10pH, Rs = 509,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
co Pulse width s 80ps; duty factor 5 0.1%.
S Pulse width 5.0ps, single shot.
