IRG4BC20UD-S ,600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak packageFeatures• UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switchi ..
IRG4BC20W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
IRG4BC20WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
IRG4BC20WS ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)applications• Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
IRG4BC20W-S ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageapplications• Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
IRG4BC30 ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
ISO213P ,Brown Corporation - Two-Port Isolated, Low Profile ISOLATED INSTRUMENTATION AMPLIFIER
ISO3080 ,Isolated 5-V Full-Duplex RS-485 TransceiversFeatures 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3080DW ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Driver... 7I CCI• Changed top row, UNIT column, split into 2 rows, top ..
ISO3080DWG4 ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
ISO3080DWR ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Maximum Ratings... 5STG• Added "Dynamic" conditions to Recommended Operating Conditions V spec with ..
ISO3082 ,Isolated 5-V Full-Duplex RS-485 TransceiversElectrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
IRG4BC20UD-S
600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package
International
TOR Rectifier
PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UItraFast CoPack IGBT
Features
. UItraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
. Generation 4 IGBT design provides tighter para-
meter distribution and higher efficiency than
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
N-channel
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, lc = 6.5A
bridge configurations
. Industry standard D2Pak package
Benefits
. Generation 4 IGBTs offers highest efficiencies
available
. Optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs D2Pak
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 13
lo @ Tc = 100°C Continuous Collector Current 6.5
ICM Pulsed Collector Current C) 52 A
ILM Clamped Inductive Load Current © 52
IF @ Tc = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 52
VGE Gate-to-Emitter Voltage , 20 V
PD @ Tc = 25°C Maximum Power Dissipation 60 W
Po @ Tc = 100°C Maximum Power Dissipation 24
To Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Typ. Max. Units
Raw; Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.5 - 'C/W
RNA Junction-to-Ambient, typical socket mount - 40
Wt Weight 1.44 - g (oz)
1
1/12/01
Internationd
IRG4BC20UD-S TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage@ 600 - - V VGE = 0V, lc = 250PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.69 - V/°C VGE = 0V, lc = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.85 2.1 lc = 6.5A VGE = 15V
- 2.27 - V k: = 13A See Fig. 2, 5
- 1.87 - Ic = 6.5A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 1.4 4.3 - S VCE = 100V, lc = 6.5A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1700 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V Ic = 8.0A See Fig. 13
- 1.3 1.6 Ic = 8.0A, To = 150°C
IGES Gate-to-Emilie, Leakage Current - - i100 nA VGE = *20V
Switching Characteristics @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 27 41 k: = 6.5A
Qge Gate - Emitter Charge (turn-on) - 4.5 6.8 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 10 16 VGE = 15V
tam) Turn-On Delay Time - 39 - TJ = 25°C
tr Rise Time - 15 - ns Ic = 6.5A, Vcc = 480V
td(off) Turn-Off Delay Time - 93 140 VGE = 15V, Rs = 50n
k Fall Time - 110 170 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.16 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.13 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 0.29 0.3
td(on) Turn-On Delay Time - 38 TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 17 - ns Ic = 6.5A, Vcc = 480V
tam) Turn-Off Delay Time - 100 - VGE = 15V, Rs = 509
tr Fall Time - 220 - Energy losses include "tail" and
G Total Switching Loss - 0.49 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 530 - VGE = 0V
Coes Output Capacitance - 39 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.4 - f = 1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns To = 25°C See Fig.
- 55 90 To = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current - 3.5 5.0 A TJ = 25''C See Fig.
- 4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 65 138 nC T J = 25°C See Fig.
- 124 360 To = 125°C 16 di/dt 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 240 - Alps To = 25°C See Fig.
During tr, - 210 - To = 125°C 17
2
