IRG4BC20UDPBF ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switch ..
IRG4BC20UD-S ,600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak packageFeatures• UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switchi ..
IRG4BC20W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
IRG4BC20WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
IRG4BC20WS ,INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)applications• Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
IRG4BC20W-S ,600V Warp 60-150 kHz Discrete IGBT in a D2-Pak packageapplications• Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
ISO213P ,Brown Corporation - Two-Port Isolated, Low Profile ISOLATED INSTRUMENTATION AMPLIFIER
ISO3080 ,Isolated 5-V Full-Duplex RS-485 TransceiversFeatures 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3080DW ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Driver... 7I CCI• Changed top row, UNIT column, split into 2 rows, top ..
ISO3080DWG4 ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
ISO3080DWR ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Maximum Ratings... 5STG• Added "Dynamic" conditions to Recommended Operating Conditions V spec with ..
ISO3082 ,Isolated 5-V Full-Duplex RS-485 TransceiversElectrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
IRG4BC20UD-IRG4BC20UDPBF
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
International
:raRIectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD-91449C
IRG4BC20UD
UItraFast CoPack IGBT
Features
. UItraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
. Generation 4 IGBT design provides tighter para-
meter distribution and higher efficiency than
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast, ultra-
soft-recovery anti-parallel diodes for use in bridge
N-Channel
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, lc = 6.5A
configurations
. Industry standard TO-220AB package
Benefits
. Generation 4 IGBTs offers the highest efMiencies
available
. Optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
I/css Collector-to-Emitter Voltage 600 V
lc @ Tc = 25''C Continuous Collector Current 13
IC @ Tc = 100°C Continuous Collector Current 6.5
ICM Pulsed Collector Current OD 52 A
ILM Clamped Inductive Load Current © 52
IF @ Tc = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum FonNard Current 52
l/GE Gate-to-Emitter Voltage 1 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 60
Po @ Tc = 100°C Maximum Power Dissipation 24
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1 A N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 2.1
ReJC Junction-to-Case - Diode - - 3.5 ''C/W
Recs Case-to-Sink, flat, greased surface - 0.50 -
ReJA Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2 (0.07) - g (oz)
1
6/16/03
International
IRG4BC20UD TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ViBR)CES Collector-to-Emitter Breakdown VoltageC 600 - - V VGE = 0V, k: = 250PA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.69 - V/°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.85 2.1 k: = 6.5A VGE = 15V
- 2.27 - V l: = 13A See Fig. 2, 5
- 1.87 - Ic = 6.5A, To = 150°C
Veam) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, lc = 250pA
gfe Forward Transconductance (D 1.4 4.3 - S VCE = 100V, Ic = 6.5A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1700 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Fon/vard Voltage Drop - 1.4 1.7 V Ic = 8.0A See Fig. 13
- 1.3 1.6 lc = 8.0A, To = 150°C
legs Gate-to-Emitter Leakage Current - - A100 nA VGE=i20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 27 41 Ic = 6.5A
Qge Gate - Emitter Charge (turn-on) - 4.5 6.8 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 10 16 VGE = 15V
tam“) Turn-On Delay Time - 39 - TJ = 25°C
tr Rise Time - 15 - ns Ic = 6.5A, Vcc = 480V
tam) Turn-Off Delay Time - 93 140 VGE = 15V, Rs = 509
tr Fall Time - 110 170 Energy losses include "tail" and
Ea, Turn-On Switching Loss - 0.16 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.13 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 0.29 0.37
tdwn) Turn-On Delay Time - 38 - TJ = 150°C, See Fig. 9, 10, 11, 18
t, Rise Time - 17 - ns k: = 6.5A, Vcc = 480V
tam) Turn-Off Delay Time - 100 - VGE = 15V, Rs = 509
tr Fall Time - 220 - Energy losses include "tail" and
ES Total Switching Loss - 0.49 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 530 - VGE = 0V
Goes Output Capacitance - 39 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.4 - f = 1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns To = 25°C See Fig.
- 55 90 To = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current - 3.5 5.0 A To = 25''C See Fig.
- 4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 65 138 nC To = 25°C See Fig.
- 124 360 To = 125°C 16 di/dt 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 240 - Alps To = 25°C See Fig.
During tr, - 210 - To = 125°C 17
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