IRG4BC20U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeaturesC UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switc ..
IRG4BC20UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageIRG4BC20UDUltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOV ..
IRG4BC20UDPBF ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switch ..
IRG4BC20UD-S ,600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak packageFeatures• UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switchi ..
IRG4BC20W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
IRG4BC20WPBF ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
ISO213P ,Brown Corporation - Two-Port Isolated, Low Profile ISOLATED INSTRUMENTATION AMPLIFIER
ISO3080 ,Isolated 5-V Full-Duplex RS-485 TransceiversFeatures 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3080DW ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Driver... 7I CCI• Changed top row, UNIT column, split into 2 rows, top ..
ISO3080DWG4 ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
ISO3080DWR ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Maximum Ratings... 5STG• Added "Dynamic" conditions to Recommended Operating Conditions V spec with ..
ISO3082 ,Isolated 5-V Full-Duplex RS-485 TransceiversElectrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
IRG4BC20U
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
fh’remohonol
Ieaa Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91448D
|RG4BC20U
UltraFast Speed IGBT
Features
. UItraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standard TO-220AB package
n-channel
VCES = 600V
VCE(on)typ. = 1 .85V
@VGE =15V, Ic = 6.5A
Benefits
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
Vcss Collector-to-Emitter Breakdown Voltage 600 V
k: © To = 25°C Continuous Collector Current 13
IC @ To = 100°C Continuous Collector Current 6.5 A
ICM Pulsed Collector Current co 52
u, Clamped Inductive Load Current © 52
V95 Gate-to-Emitter Voltage 1 20 V
EARV Reverse Voltage Avalanche Energy s 5.0 mJ
PD @ To = 25°C Maximum Power Dissipation 60 W
PD @ To = 100°C Maximum Power Dissipation 24
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
Ram Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
4/17/2000
IRG4BC20U International
iWR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, k: = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, Ic = 1.0A
AV(BR)CE$/ATJ Temperature Coeff. of Breakdown Voltage - 0.69 - V/°C VGE = 0V, Ic = 1.0mA
- 1.85 2.1 lc = 6.5A VGE = 15V
VCE(0N) Collector-tty-Ender Saturation Voltage - 2.27 - V lc = 13A See Fig.2, 5
- 1.87 - Ic = 6.5A , Tu =150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, k: = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mVPC VCE = VGE, IC = 250pA
Je Forward Transconductance s 1.4 4.3 - S VCE = 100V, Ic = 6.5A
Ices Zero Gate Voltage Collector Current - - 250 pA Vas = OV, I/cs = 600V
- - 2.0 Vss = 0V, VCE = 10V, TJ = 25°C
- - 1000 Vss = 0V, VCE = 600V, T, = 150°C
legs Gate-to-Emitter Leakage Current - - 1100 n A Vss = WO)
Switching Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 27 41 IC = 6.5A
Qge Gate - Emitter Charge (turn-on) - 4.5 6.8 nC Vcc = 400V See Fig. 8
Ac Gate - Collector Charge (turn-on) - 10 16 l/ss = 15V
td(on) Turn-On Delay Time - 21 -
tr RiseTime - 13 - ns TJ = 25°C
tdist) Turn-Off Delay Time - 86 130 Ic = 6.5A, Vcc = 480V
t, FalITime - 120 180 l/SE = 15V, Rs = 509
EOn Turn-On Switching Loss - 0.10 - Energy losses include "tail"
E017 Turn-Off Switching Loss - 0.12 - m] See Fig. 10, 11, 13, 14
ES Total Switching Loss - 0.22 0.4
tdmn) Turn-On Delay Time - 2O - Tu = 150°C,
tr RiseTime - 14 - ns IC = 6.5A, Vcc = 480V
td(0ff) Turn-Off Delay Time - 190 - VGE = 15V, Rs = 509
t, FaIITime - 140 - Energy losses include "tail"
Es Total Switching Loss - 0.42 - mJ See Fig. 13, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 530 - VGE = 0V
Cass Output Capacitance - 39 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.4 - f =1.0MHz
Notes:
co Repetitive rating; Vas-- 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs), VGE = 20V, L = 10pH, Re = 50O, B) Pulse width S 80ps; duty factor 3 0.1 /0.
(See fig. 13a) s Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
2
