IRG4BC20SPBF ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageIRG4BC20SPbF
IRG4BC20U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeaturesC UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switc ..
IRG4BC20UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageIRG4BC20UDUltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOV ..
IRG4BC20UDPBF ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switch ..
IRG4BC20UD-S ,600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak packageFeatures• UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switchi ..
IRG4BC20W ,600V Warp 60-150 kHz Discrete IGBT in a TO-220AB packageapplications Industry-benchmark switching losses improveV = 2.16VCE(on) typ.G efficiency of all p ..
ISO213P ,Brown Corporation - Two-Port Isolated, Low Profile ISOLATED INSTRUMENTATION AMPLIFIER
ISO3080 ,Isolated 5-V Full-Duplex RS-485 TransceiversFeatures 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3080DW ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Driver... 7I CCI• Changed top row, UNIT column, split into 2 rows, top ..
ISO3080DWG4 ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
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ISO3082 ,Isolated 5-V Full-Duplex RS-485 TransceiversElectrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
IRG4BC20SPBF
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
International
1ng (iuctifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. Industry standa
. Lead-Free
Benefits
PD - 95639A
IRG4BC20SPbF
Standard Speed IGBT
rd TO-220AB package
VCES = 600V
VCE(on) typ. = 1.4V
E @VGE =15V, k: =10A
n-channel
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specihed application conditions
. Designed to be
a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
. _ "v,
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Breakdown Voltage 600 V
Ic tp Tc = 25''C Continuous Collector Current 19
k: tt Tc = 100°C Continuous Collector Current 10 A
ICM Pulsed Collector Current OD 38
ILM Clamped Inductive Load Current © 38
Vse Gate-to-emitter Voltage , 20 V
EARV Reverse Voltage Avalanche Energy © 5.0 mJ
PD @ To = 25°C Maximum Power Dissipation 60 W
Pro @ Tc = 100°C Maximum Power Dissipation 24
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
01/20/10
http://www.datas
heetcataloq.com/
IRG4BC20SPbF
International
IEER Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, IC = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage (9 18 - - V VGE = 0V, k: = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.75 - V/°C VGE = 0V, Ic = 1.0mA
- 1.40 1.6 Ic=10A VGE=15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 1.85 - V Ic = 19A See Fig.2, 5
- 1.44 - |C=10A,TJ=150°C
VGEM Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
ge, Forward Transconductance s 2.0 5.8 - S VCE = 100V, k: = 10A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, TJ = 25''C
- - 1000 VGE = 0V, VCE = 600V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 27 40 Ic = 10A
Qge Gate - Emitter Charge (turn-on) - 4.3 6.5 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 10 15 VGE = 15V
td(on) Turn-On Delay Time - 27 -
tr Rise Time - 9.7 - ns Tu = 25°C
tum) Turn-Off Delay Time - 540 810 Ic = 10A, Vcc = 480V
tf Fall Time - 430 640 VGE = 15V, Rs = 509
E0n Turn-On Switching Loss - 0.12 - Energy losses include "tail"
Es, Turn-Off Switching Loss - 2.05 - mJ See Fig. 9, 10, 14
G Total Switching Loss - 2.17 3.2
td(on) Turn-On Delay Time - 25 - TJ = 150°C,
tr Rise Time - 13 - ns Ic = 10A, Vcc = 480V
List) Turn-Off Delay Time - 760 - VGE = 15V, Rs = 509
tf Fall Time - 780 - Energy losses include "tail"
G Total Switching Loss - 3.46 - mJ See Fig. 11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 550 - VGE = 0V
Coes Output Capacitance - 39 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.1 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VCE3), VGE = 20V, L = 10pH, Rs = 509,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
co Pulse width S Boys; duty factor 5 0.1%.
S Pulse width 5.0ps, single shot.
