IRG4BC20SD-SPBF ,600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package IRG4BC20SD-SPbFStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT R ..
IRG4BC20SPBF ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageIRG4BC20SPbF
IRG4BC20U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeaturesC UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switc ..
IRG4BC20UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageIRG4BC20UDUltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOV ..
IRG4BC20UDPBF ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switch ..
IRG4BC20UD-S ,600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak packageFeatures• UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switchi ..
ISO213P ,Brown Corporation - Two-Port Isolated, Low Profile ISOLATED INSTRUMENTATION AMPLIFIER
ISO3080 ,Isolated 5-V Full-Duplex RS-485 TransceiversFeatures 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3080DW ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Driver... 7I CCI• Changed top row, UNIT column, split into 2 rows, top ..
ISO3080DWG4 ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
ISO3080DWR ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Maximum Ratings... 5STG• Added "Dynamic" conditions to Recommended Operating Conditions V spec with ..
ISO3082 ,Isolated 5-V Full-Duplex RS-485 TransceiversElectrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
IRG4BC20SD-SPBF
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package
PD -95691A
lRG4BC20SD-SPbF
Standard Speed IGBT
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Featu res C
. Extremely low voltage drop 1.4Vtyp. @ 10A
. S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
. Very Tight Vce(on) distribution
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use E
in bridge configurations n-channel
. Industry standard D2Pak package
. Lead-Free
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
VCES = 600V
VCE(on) typ. = 1.4V
@VGE =15V, Ic = 10A
. Lower losses than MOSFET's conduction and D2Pak
Diode losses
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ To = 25°C Continuous Collector Current 19
lo @ To = 100°C Continuous Collector Current 10
ICM Pulsed Collector Current (D 38 A
ILM Clamped Inductive Load Current © 38
IF @ To = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 38
VGE Gate-to-Emitter Voltage t 20 V
PD @ To = 25°C Maximum Power Dissipation 60 W
PD @ To = 100°C Maximum Power Dissipation 24
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Thermal Resistance
Parameter Typ. Max. Units
Fkuc Junction-to-Case - IGBT - 2.1
RBJC Junction-to-Case - Diode - 3.5 °C/W
RQJA Junction-to-Ambient ( PCB Mounted,steady-state)* - 80
Wt Weight 1.44 - g (oz)
* When mounted on 1" square PCB (FR-4 or G-1O Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
01/21/10
IRG4BC20SD-SPbF International
IEER Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emitter Breakdown Voltagef 600 - - V VGE = 0V, Ic = 250pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.75 - V/°C Vas = 0V, k; = 1.0mA
Vegan) Collector-to-Emitter Saturation Voltage - 1.40 1.6 k: = 10A l/ss = 15V
- 1.85 - v Ic = 19A See Fig. 2, 5
- 1.44 - Ic = 10A, Tu =150°C
N/twith) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 2.0 5.8 - S VCE = 100V, Ic = 10A
ICES Zero Gate Voltage Collector Current - - 250 PA Vas = 0V, l/cs = 600V
- - 1700 Vee = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V Ic = 8.0A See Fig. 13
- 1.3 1.6 lc = 8.0A, TJ = 150°C
Kass Gate-to-Emitter Leakage Current - - $100 nA Vas = :20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 27 40 lc = 10A
Qge Gate - Emitter Charge (turn-on) - 4.3 6.5 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 10 15 Veg: 15V
two") Turn-On Delay Time - 62 - Tu = 25°C
t, Rise Time - 32 - ns k; = 10A, Vcc = 480V
td(off) Turn-Off Delay Time - 690 1040 VGE = 15V, Rs = 509
tf Fall Time - 480 730 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.32 - diode reverse recovery.
Eoff Turn-Ott Switching Loss - 2.58 - mJ See Fig. 9, IO, 11,18
Ets Total Switching Loss - 2.90 4.5
Won) Turn-On Delay Time - 64 - Tu = 150°C, See Fig. 10,11, 18
t, Rise Time - 35 - ns k: = 10A, Vcc = 480V
td(off) Turn-Off Delay Time - 980 - Vse = 15V, Rs = 509
tf Fall Time - 800 - Energy losses include "tail" and
Ets Total Switching Loss - 4.33 - mJ diode reverse recovery.
Ls Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 550 - VGE = 0V
Coes Output Capacitance - 39 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 7.1 - f = 1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns Tu = 25°C See Fig.
- 55 90 TJ = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current - 3.5 5.0 A Tu = 25°C See Fig.
- 4.5 8.0 Tu = 125°C 15 Va = 200V
Qrr Diode Reverse Recovery Charge - 65 138 nC Tu = 25°C See Fig.
- 124 360 Tu = 125°C 16 di/dt = 200Aps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 240 - Alps Tu = 25°C See Fig.
During tb - 210 - TJ = 125°C 17
2
