IRG4BC20SD-S ,600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak packageFeatures• Extremely low voltage drop 1.4Vtyp. @ 10AV = 600VCES• S-Series: Minimizes power dissipati ..
IRG4BC20SD-SPBF ,600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package IRG4BC20SD-SPbFStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT R ..
IRG4BC20SPBF ,600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB packageIRG4BC20SPbF
IRG4BC20U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB packageFeaturesC UltraFast: optimized for high operatingV = 600VCES frequencies 8-40 kHz in hard switc ..
IRG4BC20UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageIRG4BC20UDUltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOV ..
IRG4BC20UDPBF ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures UltraFast: Optimized for high operating frequenciesV = 600VCES 8-40 kHz in hard switch ..
ISO213P ,Brown Corporation - Two-Port Isolated, Low Profile ISOLATED INSTRUMENTATION AMPLIFIER
ISO3080 ,Isolated 5-V Full-Duplex RS-485 TransceiversFeatures 3 DescriptionThe ISO3080 and ISO3086 devices are isolated full-1• Meets or Exceeds TIA/EIA ..
ISO3080DW ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Driver... 7I CCI• Changed top row, UNIT column, split into 2 rows, top ..
ISO3080DWG4 ,Isolated 5-V Full-Duplex RS-485 Transceivers 16-SOIC -40 to 85Electrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
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ISO3082 ,Isolated 5-V Full-Duplex RS-485 TransceiversElectrical Characteristics: Receiver ........ 812.3 Receiving Notification of Documentation Updates ..
IRG4BC20SD-S
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package
. PD -91794
International
IEER Rectifier IRG4BC20SD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
. Extremely low voltage drop 1.4Vtyp. @ 10A "
. S-Series: Minimizes power dissipation at up to 3 f
KHz PWM frequency in inverter drives, up to 4 K TN
KHz in brushless DC drives. VCE(on) typ. = 1.41/
. Very Tight Vce(on) distribution TM
. IGBT co-packaged with HEXFRED ultrafast, = =
ultra-soft-recovery anti-parallel diodes for use E @VGE 15V, lc 10A
in bridge configurations n-channel
. Industry standard D2Pak package
VCES = 600V
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
I IGBT's optimized for specfc application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Lower losses than MOSFET's conduction and
Diode losses
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emilie, Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 19
lc @ Tc = 100°C Continuous Collector Current 10
ICM Pulsed Collector Current co 38 A
ILM Clamped Inductive Load Current © 38
IF @ To = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 38
VGE Gate-to-Emitter Voltage l 20 V
PD @ Tc = 25°C Maximum Power Dissipation 60
PD @ Tc = 100°C Maximum Power Dissipation 24
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Thermal Resistance
Parameter Typ. Max. Units
Ric Junction-to-Case - IGBT - 2.1
Ric Junction-to-Case - Diode - 3.5 "C/W
' Junction-to-Ambient ( PCB Mounted/steady-state)' - 80
Wt Weight 1.44 - g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
1
IRG4BC20SD-S
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-Emi) Breakdown Voltage f 600 - - V VGE = 0V, lc = 250PA
DV(BR)CEs/DTJ Temperature Coeff. of Breakdown Voltage - 0.75 - V/°C VGE = 0V, IC = 1.0mA
l/com) Collector-to-Emi) Saturation Voltage - 1.40 1.6 _ Ic = 10A VGE = 15V
- 1.85 - V Ic = 19A See Fig. 2, 5
- 1.44 - lc = 10A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, IC = 250pA
gfe Forward Transconductance CI) 2.0 5.8 - S VCE = 100V, lc = 10A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1700 VGE = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V IC = 8.0A See Fig. 13
- 1.3 1.6 lc = 8.0A, Tu = 150°C
IGEs Gate-to-Emitter Leakage Current - - i100 nA VGE = :20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qq Total Gate Charge (turn-on) - 27 40 Ic = 10A
Qge Gate - Emitter Charge (turn-on) - 4.3 6.5 nC Vcc = 400V See Fig. 8
09¢ Gate - Collector Charge (turn-on) - 10 15 VGE = 15V
td(on) Turn-On Delay Time - 62 - Tu = 25''C
tr Rise Time - 32 - ns Ic = 10A, Vcc = 480V
td(ott) Turn-Off Delay Time - 690 1040 VGE = 15V, Rs = 50w
tt Fall Time - 480 730 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.32 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 2.58 - mJ See Fig. 9, 10, 11,18
Ets Total Switching Loss - 2.90 4.5
td(on) Turn-On Delay Time - 64 - Tu = 150°C, See Fig. 10,11, 18
tr Rise Time - 35 - ns Ic = 10A, Vcc = 480V
td(off) Turn-Off Delay Time - 980 - VGE = 15V, Rs = 50W
tf Fall Time - 800 - Energy losses include "tail" and
Ets Total Switching Loss - 4.33 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 550 - VGE = 0V
Coes Output Capacitance - 39 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.1 - f = 1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns T: = 25°C See Fig.
- 55 90 TJ = 125°C 14 IF = 8.0A
lr, Diode Peak Reverse Recovery Current - 3.5 5.0 A Tu = 25°C See Fig.
- 4.5 8.0 TJ = 125°C 15 VR = 200V
G, Diode Reverse Recovery Charge - 65 138 nC Tu = 25°C See Fig.
- 124 360 T: = 125°C 16 di/dt = 200Aps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 240 - Alps Tu = 25°C See Fig.
During tr, - 210 - W 17
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