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IRG4BC20MD-S
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. Rugged: 10psec short circuit capable at VGS=15V
. Low VCEWD for 4 to 10kHz applications
. IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
. Industry standard
Benefits
. Offers highest efficiency and short circuit
capability for intermediate applications
IRG4BC20MD-S
Short Circuit Rated
D2Pak package
Fast IGBT
VCES = 600V
VCE(on) typ. = 1.85V
E @VGE=15V,IC=11A
n-channel
. Provides best efficiency for the mid range frequency
(4 to 10kHz)
. Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
. High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
. For Low EMI designs- requires little or no snubbing
. Single Package switch for bridge circuit applications D2Pak
. Compatible with high voltage Gate Driver IC's
. Allows simpler gate drive
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 18
lo @ Tc = 100°C Continuous Collector Current 11
ICM Pulsed Collector Current co 36 A
ILM Clamped Inductive Load Current © 36
IF @ Tc = 100°C Diode Continuous Forward Current 7.0
tsc Short Circuit \Mthstand Time 10 us
IFM Diode Maximum Forward Current 36 A
VGE Gate-to-Emitter Voltage 1 20 V
Po @ Tc = 25°C Maximum Power Dissipation 60
Pro @ TC = 100°C Maximum Power Dissipation 24
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 tom)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT ------------ 2.1
ReJC Junction-to-Case - Diode ------------ 2.5 ''C/W
Recs Case-to-Sink, flat, greased surface ------ 0.50 -
ReJA Junction-to-Ambient, typical socket mount ---------- 80
Wt Weight ------ 2 (0.07) ------ g (oz)
1
3/6/01
International
IRG4BC20MD-S TOR Rectifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ViBR)CES Collector-to-Emitter Breakdown Voltage0 600 - - V VGE = 0V, Ic = 250PA
AV(BR)CEs/AT Temperature Coeff. of Breakdown Voltage - 0.67 - V/°C VGE = 0V, lc = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.85 2.1 k: = 11A VGE = 15V
- 2.46 - V l: = 18A See Fig. 2, 5
- 2.07 - Ic = 11A, Tu = 150°C
Veam) Gate Threshold Voltage 4.0 ---- 6.5 VCE = VGE, k: = 250PA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -11 ---- mV/°C VCE = VGE, lc = 250pA
gfe Forward Transconductance © 3.0 3.6 - S VCE = 100V, Ic = 11A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 2500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Fon/vard Voltage Drop ---- 1.4 1.7 V Ic = 8.0A See Fig. 13
- 1.3 1.6 lc = 8.0A, To = 150°C
legs Gate-to-Emitter Leakage Current - ---- A100 nA VGE = A20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ---- 39 59 lc = 11A
Qge Gate - Emitter Charge (turn-on) - 5.3 8.0 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 20 30 VGE = 15V
Mon) Turn-On Delay Time ---- 21 ---- TJ = 25°C
tr Rise Time - 37 ---- ns k: = 11A, Vcc = 480V
tam) Turn-Off Delay Time ---- 463 690 VGE = 15V, Rs = 500
tf Fall Time - 340 510 Energy losses include "tail" and
G Turn-On Switching Loss - 0.41 - diode reverse recovery.
Eoit Turn-Off Switching Loss ---- 2.03 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss ---- 2.44 3.7
td(on) Turn-On Delay Time ---- 19 ---- Tu = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time ---- 41 ---- ns Ic = 6.5A, Vcc = 480V
tum) Turn-Off Delay Time ---- 590 ---- VGE = 15V, Rs = 50n
tf Fall Time - 600 - Energy losses include "tail" and
Ets Total Switching Loss ---- 3.49 -- mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 460 - VGE = 0V
Coes Output Capacitance ---- 54 ---- pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 14 - f = 1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns To = 25°C See Fig.
---- 55 90 TJ = 125°C 14 IF = 8.0A
Ir, Diode Peak Reverse Recovery Current - 3.5 5.0 A TJ = 25°C See Fig.
- 4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge ---- 65 138 nC To = 25°C See Fig.
- 124 360 To = 125°C 16 di/dt 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 240 - Alps To = 25''C See Fig.
During tr, - 210 - TJ = 125°C 17
2
