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IRG4BC20KD-S-IRG4BC20KD-STRR
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. Short Circuit Rated UItraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10ps @ 125°C, VGE = 15V
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
. Industry standard D2Pak package
Benefits
. Latest generation 4 IGBTs offer highest power
density motor controls possible.
.HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.
.This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.
. For hints see design tip 97003.
Absolute Maximum Ratings
PD -91598A
IRG4BC20KD-S
Short Circuit Rated
UItraFast IGBT
n-channel
VCES = 600V
@VGE = 15V, lc = 9.0A
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 16
Ic @ To = 100°C Continuous Collector Current 9.0
ICM Pulsed Collector Current C) 32 A
ILM Clamped Inductive Load Current © 32
IF @ Tc = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 32
tsc Short Circuit 1/Whstand Time 10 us
VGE Gate-to-Emitter Voltage l 20 V
Pro @ To = 25°C Maximum Power Dissipation 60
Pro @ To = 100°C Maximum Power Dissipation 24
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - IGBT - 2.1
ReJC Junction-to-Case - Diode 2.5
Recs Case-to-Sink, Flat, Greased Surface 0.5 - °CNV
ReJA Junction-to-Ambient ( PCB Mounted,steady-state)© - 40
Wt Weight 1.44 - g
1
4/24/2000
International
IRG4BC20KD-S IEZR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltages 600 - - V VGE = 0V, IC = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.49 - V/°C VGE = 0V, Ic = 1.0mA
Vegan) Collector-to-Emitter Saturation Voltage - 2.27 2.8 Ic = 9.0A VGE = 15V
- 3.01 - V lc = 16A See Fig. 2, 5
- 2.43 - Ic = 9.0A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -10 - mV/°C VCE = VGE, lc = 250pA
Te Forward Transconductance © 2.9 4.3 - S VCE = 100V, Ic = 9.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V k: = 8.0A See Fig. 13
- 1.3 1.6 lc = 8.0A, Tu =150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 34 51 Ic = 9.0A
Qge Gate - Emitter Charge (turn-on) - 4.9 7.4 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 14 21 VGE = 15V
Gon) Turn-On Delay Time - 54 -
tr Rise Time - 34 - ns TJ = 25°C
td(ott) Turn-Off Delay Time - 180 270 lc = 9.0A, Vcc = 480V
tf Fall Time - 72 110 VGE = 15V, Rs = 509
Eon Turn-On Switching Loss - 0.34 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 0.30 - mJ and diode reverse recovery
Ets Total Switching Loss - 0.64 0.96 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 - - us Vcc = 360V, To = 125°C
VGE = 15V, Rs = 509 , VCPK < 500V
tdmn) Turn-On Delay Time - 51 - TJ = 150°C, See Fig. 11,14
tr Rise Time - 37 - ns k: = 9.0A, Vcc = 480V
td(off) Turn-Off Delay Time - 220 - VGE = 15V, Rs = 509
tf Fall Time - 160 - Energy losses include "tail"
Ets Total Switching Loss - 0.85 - mJ and diode reverse recovery
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 450 - VGE = 0V
Goes Output Capacitance - 61 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 14 - f = 1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns T: = 25°C See Fig.
- 55 90 TJ = 125°C 14 IF = 8.0A
lrr Diode Peak Reverse Recovery Current - 3.5 5.0 A TJ = 25°C See Fig.
- 4.5 8.0 TJ =125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 65 138 nC TJ = 25°C See Fig.
- 124 360 TJ = 125°C 16 di/dt = 200Aps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 240 - Alps T: = 25°C See Fig.
During tn - 210 - TJ = 125°C 17
2
