IRG4BC20FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220AB packageFeatures Fast: optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4BC20FD-S ,600V Fast 1-8 kHz Discrete IGBT in a D2-Pak packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4BC20FPBF ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB packagePD - 95742IRG4BC20FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB packageFeaturesC High short circuit rating optimized for motor control,V = 600V t =10µs, @360V V (star ..
IRG4BC20KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packageFeaturesC Short Circuit Rated UltraFast: Optimized forV = 600V high operating frequencies >5.0 k ..
IRG4BC20KDPBF ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packagePD -91599AIRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVE ..
ISO150AUG4 ,Dual, Isolated, Bi-Directional Digital Coupler 12-SOP -40 to 85
ISO1540DR ,2.5 kVrms Isolated Bidirectional Clock, Bidirectional I2C Isolators 8-SOIC -40 to 125Features 3 Description2The ISO1540 and ISO1541 devices are low-power,1• Isolated Bidirectional, I C ..
ISO15DW ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85FEATURES From: 4000-V 560-V V per IEC....Rev 2) To: 4000-V V , 560-V V ,peak peak IORM PK IOTM PK I ..
ISO15DWR ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO15 is an isolated half-duplex differential line1• Meets or Exceeds TIA ..
ISO15DWRG4 ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85 SLOS580G–MAY 2008–REVISED MARCH 2015V values From: TYP = -, MAX = 90 To: TYP = -10, MAX = - ...... ..
ISO1H811G , Coreless Transformer Isolated Digital Output 8 Channel 0.625A High-Side Switch
IRG4BC20FD
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD 91601A
IRG4BC20FD
Fast CoPack IGBT
Features
. Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
q Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
n-channel
VCES = 600V
@VGE = 15V, IC = 9.0A
bridge configurations
. Industry standard TO-220AB package
Benefits
q Generation -4 IGBTs offer highest efficiencies
available
. IGBTs optimized for specific application conditions
q HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
q Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
k: © To = 25°C Continuous Collector Current 16
IC @ Ts = 100°C Continuous Collector Current 9.0
ICM Pulsed Collector Current C) 64 A
ILM Clamped Inductive Load Current © 64
IF @ To = 100°C Diode Continuous Forward Current 7.0
Fu Diode Maximum Forward Current 32
VGE Gate-to-Emitter Voltage i 20 V
PD @ Ts = 25°C Maximum Power Dissipation 60 W
Po @ To = 100°C Maximum Power Dissipation 24
Tu Operating Junction and -55 to +150
Tsms Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 1O lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 2.1
RQJC Junction-to-Case - Diode - - 3.5 TUW
Recs Case-to-Sink, flat, greased surface - 0.50 -
Ram Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2 (0.07) - g (oz)
1
7/1 1/2000
International
IRG4BC20FD TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltages 600 - - V VGE = 0V, lc = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.72 - V/°C VGE = 0V, Ic = 1.0mA
VCEmn) Collector-to-Emitter Saturation Voltage - 1.66 2.0 Ic = 9.0A VGE = 15V
- 2.06 - V Ic = 16A See Fig. 2, 5
- 1.76 - Ic = 9.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Veg, k: = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -1 1 - mV/°C VCE = VGE, k; = 250pA
9te Forward Transconductance Ci) 2.9 5.1 - S VCE = 100V, Ic = 9.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1700 I/ss = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V k: = 8.0A See Fig. 13
- 1.3 1.6 Ic = 8.0A, To =150°C
legs Gate-to-Emitter Leakage Current - - i100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ch Total Gate Charge (turn-on) - 27 40 k; = 9.0A
Qge Gate - Emitter Charge (turn-on) - 4.2 6.2 nC Vcc = 400V See Fig. 8
(h, Gate - Collector Charge (turn-on) - 9.9 15 Vias = 15V
tam) Turn-On Delay Time - 43 - To = 25°C
tr RiseTime - 20 - ns Ic = 9.0A, Vcc = 480V
tdwff) Turn-Off Delay Time - 240 360 Vas = 15V, Rs = 509
tf FalITime - 150 220 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.25 - diode reverse recovery.
Em Turn-Off Switching Loss - 0.64 - ntl See Fig. 9, IO, 18
Es Total Switching Loss - 0.89 1.3
tam) Turn-On Delay Time - 41 - TJ = 150°C, See Fig. 11, 18
tr RiseTime - 22 - ns k, = 9.0A, Vcc = 480V
td(off) Turn-Off Delay Time - 320 - Vas = 15V, Rs = 509
tf FalITime - 290 - Energy losses include "tail" and
Es Total Switching Loss - 1.35 - rN diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 540 - VGE = 0V
cas Output Capacitance - 37 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance - 7.0 - f =1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns To = 25°C See Fig.
- 55 90 To = 125°C 14 IF = 8.0A
lrr Diode Peak Reverse Recovery Current - 3.5 5.0 A To = 25°C See Fig.
- 4.5 8.0 To = 125°C 15 Va = 200V
G, Diode Reverse Recovery Charge - 65 138 nC To = 25°C See Fig.
- 124 360 TJ = 125°C 16 di/dt = 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 240 - A/ps TJ = 25°C See Fig.
During tr, - 210 - To = 125°C 17
