IRG4BC20FD-S ,600V Fast 1-8 kHz Discrete IGBT in a D2-Pak packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4BC20FPBF ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB packagePD - 95742IRG4BC20FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20K ,600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB packageFeaturesC High short circuit rating optimized for motor control,V = 600V t =10µs, @360V V (star ..
IRG4BC20KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packageFeaturesC Short Circuit Rated UltraFast: Optimized forV = 600V high operating frequencies >5.0 k ..
IRG4BC20KDPBF ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packagePD -91599AIRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVE ..
IRG4BC20KD-S ,600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak packageFeaturesC• Short Circuit Rated UltraFast: Optimized forV = 600V high operating frequencies >5.0 k ..
ISO150AUG4 ,Dual, Isolated, Bi-Directional Digital Coupler 12-SOP -40 to 85
ISO1540DR ,2.5 kVrms Isolated Bidirectional Clock, Bidirectional I2C Isolators 8-SOIC -40 to 125Features 3 Description2The ISO1540 and ISO1541 devices are low-power,1• Isolated Bidirectional, I C ..
ISO15DW ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85FEATURES From: 4000-V 560-V V per IEC....Rev 2) To: 4000-V V , 560-V V ,peak peak IORM PK IOTM PK I ..
ISO15DWR ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO15 is an isolated half-duplex differential line1• Meets or Exceeds TIA ..
ISO15DWRG4 ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85 SLOS580G–MAY 2008–REVISED MARCH 2015V values From: TYP = -, MAX = 90 To: TYP = -10, MAX = - ...... ..
ISO1H811G , Coreless Transformer Isolated Digital Output 8 Channel 0.625A High-Side Switch
IRG4BC20FD-S
600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package
International
TOR Rectifier
PD -91783A
IRG4BC20FD-S
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
. Generation 4 IGBT design provides tighter G
parameter distribution and higher etrciency than
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
n-channel
VCES = 600V
@VGE = 15V, k: = 9.0A
in bridge configurations
. Industry standard D2Pak package
Benefits
. Generation 4 IGBTs offer highest efficiencies
available
. IGBTs optimized for speafc application conditions
. HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
o Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25''C Continuous Collector Current 16
IC @ Tc = 100°C Continuous Collector Current 9.0
ICM Pulsed Collector Current CD 64 A
ILM Clamped Inductive Load Current © 64
IF @ Tc = 100°C Diode Continuous Forward Current 8.0
IFM Diode Maximum Forward Current 60
V95 Gate-to-Emitter Voltage , 20 V
Po @ TC = 25°C Maximum Power Dissipation 60
Po @ Tc = 100°C Maximum Power Dissipation 24
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - IGBT - 2.1
ReJC Junction-to-Case - Diode - 3.5 °C/W
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)' - 80
Wt Weight 1.44 - g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
4/24/2000
International
IRG4BC20FD-S :rcmiiectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emilie, Breakdown Voltages 600 - - V VGE = 0V, Ic = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.72 - V/°C VGE = 0V, IC = 1.0mA
Vegan) Collector-to-Emitter Saturation Voltage - 1.66 2.0 Ic = 9.0A VGE = 15V
- 2.06 - V Ic = 16A See Fig. 2, 5
- 1.76 - Ic = 9.0A, TJ = 150°C
VGEith) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, k: = 250pA
gig Forward Transconductance © 2.9 5.1 - S VCE = 100V, lc = 9.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1700 VGE = 0V, VCE = 600V, T: = 150°C
VFM Diode Forward Voltage Drop - 1.4 1.7 V Ic = 8.0A See Fig. 13
- 1.3 1.6 lc = 8.0A, Tu =150°C
legs Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 27 40 lc = 9.0A
Qge Gate - Emitter Charge (turn-on) - 4.2 6.2 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 9.9 15 VGE = 15V
td(on) Turn-On Delay Time - 43 - TJ = 25°C
tr Rise Time - 20 - ns k: = 9.0A, Vcc = 480V
td(off) Turn-Off Delay Time - 240 360 VGE = 15V, Rs = 509
t, Fall Time - 150 220 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.25 - diode reverse recovery.
Esr Turn-Off Switching Loss - 0.64 - mJ See Fig. 9, 10, 18
Ets Total Switching Loss - 0.89 1.3
tuion) Turn-On Delay Time - 41 - TJ = 150°C, See Fig. IO, 11, 18
t, Rise Time - 22 - ns Ic = 9.0A, Vcc = 480V
tam) Turn-Off Delay Time - 320 - VGE = 15V, Rs = 509
tf Fall Time - 290 - Energy losses include "tail" and
Ets Total Switching Loss - 1.35 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 540 - VGE = 0V
Coes Output Capacitance - 37 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.0 - f = 1.0MHz
trr Diode Reverse Recovery Time - 37 55 ns TJ = 25°C See Fig.
- 55 90 TJ = 125°C 14 IF = 8.0A
In Diode Peak Reverse Recovery Current - 3.5 5.0 A TJ = 25°C See Fig.
- 4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 65 138 nC TJ = 25''C See Fig.
- 124 360 T: = 125°C 16 di/dt = 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 240 - Alps T: = 25°C See Fig.
During tb - 210 - TJ = 125°C 17
2
