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IRG4BC20F
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Fast: Optimized for medium operating
frequencies ( 1
kHz in resonant mode).
. Generation 4 IGBT design provides tighter
parameter distri
Generation 3
- Industry standa
Benefits
PD - 91602A
IRG4BC20F
Fast Speed IGBT
-5 kHz in hard switching, >20
bution and higher efficiency than
rd TO-220AB package
VCES = 600V
VCE(on) typ. = 1.66V
E @VGE = 15v, Ic = 9.0A
n-channel
. Generation 4 IGBTs offer highest efficiency available
. IGBTs optimized for specified application conditions
. Designed to be
a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
k: @ To = 25°C Continuous Collector Current 16
lo © To = 100°C Continuous Collector Current 9.0 A
ICM Pulsed Collector Current co 64
ILM Clamped Inductive Load Current © 64
Vas Gate-to-Emitter Voltage t 20 V
EARV Reverse Voltage Avalanche Energy © 5.0 mJ
Po @ To = 25°C Maximum Power Dissipation 60 W
Po @ To = 100°C Maximum Power Dissipation 24
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw.
10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.1
Recs Case-to-Sink, Flat, Greased Surface 0.5 - °C/W
RBJA Junction-to-Ambient, typical socket mount - 80
Wt Weight 2.0 (0.07) - g (oz)
1
4/17/2000
IRG4BC20F
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V l/ss = 0V, IC = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, IC = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.72 - VPC VGE = 0V, Ic = 1.0mA
- 1.66 2.0 k: = 9.0A VGE = 15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 2.06 - V k; = 16A See Fig.2, 5
- 1.76 - Ic = 9.0A t To =150°C
VGEm Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250PA
AVGEah/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, k: = 250pA
Be Forward Transconductance G) 2.9 5.1 - S VCE = 100V, lc = 9.0A
ICES Zero Gate Voltage Collector Current - - 250 PA Vas = OV, VCE = 600V
- - 2.0 Vas = OV, VCE = 10v, T, = 25°C
- - 1000 Vss = 0V, VCE = 600V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - 1100 nA Vss = A0V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 27 40 IC = 9.0A
age Gate - Emitter Charge (turn-on) - 4.2 6.2 nC Vcc = 400V See Fig. 8
%c Gate - Collector Charge (turn-on) - 9.9 15 Vas = 15V
tdion) Turn-On Delay Time - 24 -
tr Rise Time - 17 - ns To = 25°C
tdm) Turn-Off Delay Time - 190 280 Ic = 9.0A, Vcc = 480V
I, Fall Time - 210 320 VGE = 15V, Rs = 509
Eon Turn-On Switching Loss - 0.07 - Energy losses include "tail"
Est Turn-Off Switching Loss - 0.60 - mJ See Fig. 9, IO, 14
Ets Total Switching Loss - 0.67 1.1
td(on) Turn-On Delay Time - 24 - Tu = 150°C,
t, Rise Time - 17 - ns IC = 9.0A, Vcc = 480V
td(off) Turn-Off Delay Time - 300 - VGE = 15V, Rs = 50n
t, Fall Time - 340 - Energy losses include "tail"
Ets Total Switching Loss - 1.30 - mJ See Fig. 11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 540 - VGE = 0V
CoeS Output Capacitance - 37 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.0 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs), l/ss = 20V, L = 10pH, Rs = 509,
(See fig. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width S 80ps; duty factor 3 0.1%.
s Pulse width 5.0ps, single shot.
