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IRG4BC15UD
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
PD - 94082A
International
Tait Rectifier IRG4BC'15UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFaSt CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features . . VCES = 600V
. UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
. IGBT Co-packaged with ultra-soft-recovery G VCE(on) typ. = 2.02V
antiparallel diode
. Industry standard TO-220AB package E @VGE = 15V, lc = 7.8A
n -ch a n n el
Benefits
. Best Value for Appliance and Industrial Applications
. High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
. For Low EMI designs- requires little or no snubbing
. Single Package switch for bridge circuit applications
. Compatible with high voltage Gate Driver IC's
. Allows simpler gate drive
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emi) Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 14
Ic @ Tc = 100°C Continuous Collector Current 7.8
ICM Pulsed Collector Current C) 42 A
ILM Clamped Inductive Load Current C) 42
IF @ Tc = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
VGE Gate-to-Emitter Voltage i 20 V
PD @ Tc = 25°C Maximum Power Dissipation 49 W
Pro @ TC = 100°C Maximum Power Dissipation 19
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibfoin (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Case - IGBT - - 2.7
Reoc Junction-to-Case - Diode - - 7.0 ''CA/V
Recs Case-to-Sink, flat, greased surface - 0.50 -
ReJA Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2 (0.07) - g (oz)
1
03/20/01
|RG4BC15UD
Internationd
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
m Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltages 600 - - V VGE = 0V, k: = 250PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C VGE = 0V, Ic = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 2.02 2.4 lc = 7.8A VGE = 15V
- 2.56 - V lc = 14A
2.21 lc = 7.8A, T: = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -10 - mV/''C VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 4.1 6.2 - S VCE = 100V, Ic = 7.8A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1400 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V Ic = 4.0A
- 1.4 1.7 Ic = 4.0A, T: =150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 23 35 Ic = 7.8A
Qge Gate - Emitter Charge (turn-on) - 4.0 6.0 nC Vcc = 400V
Qgc Gate - Collector Charge (turn-on) - 9.6 14 VGE = 15V
td(on) Turn-On Delay Time - 17 - TJ = 25''C
tr Rise Time - 20 - ns Ic = 7.8A, Vcc = 480V
td(off) Turn-Off Delay Time - 160 240 VGE = 15V, RG = 759
tf Fall Time - 83 120 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.24 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.26 - mJ
Ets Total Switching Loss - 0.50 0.63
tum) Turn-On Delay Time - 16 - TJ = 150°C,
tr Rise Time - 21 - ns Ic = 7.8A, Vcc = 480V
td(off) Turn-Off Delay Time - 180 - VGE = 15V, Rs = 75n
t, Fall Time - 220 - Energy losses include "tail" and
Ets Total Switching Loss - 0.76 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 410 - VGE = 0V
Coes Output Capacitance - 37 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 5.3 - f = 1.0MHz
trr Diode Reverse Recovery Time - 28 42 ns Tu = 25°C
- 38 57 Tu = 125°C IF = 4.0A
n Diode Peak Reverse Recovery Current - 2.9 5.2 A Tu = 25°C
- 3.7 6.7 TJ = 125°C VR = 200V
Qrr Diode Reverse Recovery Charge - 40 60 nC TJ = 25°C
- 70 110 TJ = 125°C di/dt 200/Vps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps To = 25°C
During tn - 240 - To = 125°C
