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IRG4BC15UD-SPBF
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
International
Tait Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
. IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
. Industry standard
. Lead-Free
Benefits
PD - 95781
IRG4BC15UD-SPbF
IRG4BC'15UD-LPbF
UltraFast CoPack IGBT
D2Pak & TO-262 packages
VCES = 600V
VCE(on) typ. = 2.02V
E @VGE = 15V, lc = 7.8A
n-channel
. Best Value for Appliance and Industrial Applications
. High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
. For Low EMI designs- requires little or no snubbing
. Single Package switch for bridge circuit applications
. Compatible with high voltage Gate Driver IC's
. Allows simpler gate drive
Absolute Maximum Ratings
IRG4BC15UD-S
TO-262
|RG4BC15UD-L
Parameter Max. Units
I/css Collector-to-Emi) Voltage 600 V
k: @ To = 25°C Continuous Collector Current 14
Ic @ Tc = 100°C Continuous Collector Current 7.8
ICM Pulsed Collector Current (D 42 A
ILM Clamped Inductive Load Current © 42
IF @ Tc = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
Vas Gate-to-Emi) Voltage * 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 49
Po @ Tc = 100°C Maximum Power Dissipation 19 W
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 2.7
ReJC Junction-to-Case - Diode - - 7.0 ''C/W
Recs Case-to-Sink, flat, greased surface - 0.50 _-
RQJA Junction-to-Ambient, typical socket mount S - - 80
ReJA Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight - 2 (0.07) - g (oz)
1
08/27/04
|RG4BC15UD-S/LPbF
International
IEZR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltages 600 - - V VGE = 0V, k: = 250pA
AV
VCE(on) Collector-to-Emitter Saturation Voltage - 2.02 2.4 Ic = 7.8A VGE = 15V
- 2.56 - V IC = 14A
2.21 Ic = 7.8A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -10 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 4.1 6.2 - S VCE = 100V, lc = 7.8A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = ov, VCE = 600V
- - 1400 VGE = 0V, VCE = 600V, T: = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V Ic = 4.0A
- 1.4 1.7 Ic = 4.0A, TJ = 150°C
IGES Gate-to-Emilie, Leakage Current - - i100 nA VGE = i20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 23 35 Ic = 7.8A
Qge Gate - Emitter Charge (turn-on) - 4.0 6.0 nC Vcc = 400V
' Gate - Collector Charge (turn-on) - 9.6 14 VGE = 15V
tdmn) Turn-On Delay Time - 17 - TJ = 25°C
tr Rise Time - 20 - ns lc = 7.8A, Vcc = 480V
tum) Turn-Off Delay Time - 160 240 VGE = 15V, Rs = 759
k Fall Time - 83 120 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.24 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.26 - mJ
Ets Total Switching Loss - 0.50 0.63
td(on) Turn-On Delay Time - 16 - To = 150°C,
tr Rise Time - 21 - ns Ic = 7.8A, Vcc = 480V
td(0ff) Turn-Off Delay Time - 180 - VGE = 15V, Rs = 759
k Fall Time - 220 - Energy losses include "tail" and
Ets Total Switching Loss - 0.76 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 410 - VGE = 0V
Coes Output Capacitance - 37 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 5.3 - f = 1.0MHz
trr Diode Reverse Recovery Time - 28 42 ns To = 25°C
- 38 57 TJ = 125°C IF = 4.0A
lrr Diode Peak Reverse Recovery Current - 2.9 5.2 A TJ = 25°C
- 3.7 6.7 TJ = 125°C VR = 200V
Q,, Diode Reverse Recovery Charge - 40 60 nC To = 25°C
- 70 110 To = 125°C di/dt 200AIps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps To = 25°C
During tr, - 240 - TJ = 125°C
