IRG4BC15UD-S ,600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak packageapplications Compatible with high voltage Gate Driver IC's Allows simpler gate drive2D PakTO-26 ..
IRG4BC15UD-SPBF ,600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak packageapplications• Compatible with high voltage Gate Driver IC's• Allows simpler gate drive2D PakTO-262I ..
IRG4BC20F ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB packageFeatures C Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
IRG4BC20F ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
IRG4BC20FD ,600V Fast 1-8 kHz Copack IGBT in a TO-220AB packageFeatures Fast: optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
IRG4BC20FD-S ,600V Fast 1-8 kHz Discrete IGBT in a D2-Pak packageFeatures• Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switching ..
ISO-130U ,Brown Corporation - High IMR, Low Cost ISOLATION AMPLIFIER
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ISO150AUG4 ,Dual, Isolated, Bi-Directional Digital Coupler 12-SOP -40 to 85
ISO1540DR ,2.5 kVrms Isolated Bidirectional Clock, Bidirectional I2C Isolators 8-SOIC -40 to 125Features 3 Description2The ISO1540 and ISO1541 devices are low-power,1• Isolated Bidirectional, I C ..
ISO15DW ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85FEATURES From: 4000-V 560-V V per IEC....Rev 2) To: 4000-V V , 560-V V ,peak peak IORM PK IOTM PK I ..
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IRG4BC15UD-S
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
International
Tait Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. UItraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
. IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
. Industry standard D2Pak & TO-262 packages
Benefits
. Best Value for Appliance and Industrial Applications
. High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
. For Low EMI designs- requires little or no snubbing
. Single Package switch for bridge circuit applications
. Compatible with high voltage Gate Driver kys
. Allows simpler gate drive
Absolute Maximum Ratings
PD - 94083A
IRG4BC15UD-S
IRG4BC15UD-L
UItraFast CoPack IGBT
n-channel
VCES = 600V
@VGE = 15V, Ic = 7.8A
IRG4BC15UD-S
TO-262
IRG4BC15UD-L
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 14
Ic @ Tc = 100°C Continuous Collector Current 7.8
ICM Pulsed Collector Current C) 42 A
ILM Clamped Inductive Load Current © 42
IF @ Tc = 100°C Diode Continuous Forward Current 4.0
[FM Diode Maximum Forward Current 16
VGE Gate-to-Emitter Voltage , 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 49
Pn @ Tc = 100°C Maximum Power Dissipation 19 W
Tu Operating Junction and -55 to +150
Tsrs Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJc Junction-to-Case - IGBT - - 2.7
Rac Junction-to-Case - Diode - - 7.0 ''C/W
Recs Case-to-Sink, flat, greased surface - 0.50 -
RNA Junction-to-Ambient, typical socket mount 6) - - 80
ReoA Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight - 2 (0.07) - g (oz)
1
06/12/01
IRG4BCI5UD-S/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-emitter Breakdown Voltages 600 - - V VGE = 0V, k: = 250PA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C VGE = 0V, k: = 1.0mA
VCE(0n) Collector-to-Emitter Saturation Voltage - 2.02 2.4 Ic = 7.8A VGE = 15V
- 2.56 - V lc = 14A
2.21 - k: = 7.8A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -10 - mV/°C VCE = VGE, k: = 250pA
gfe Forward Transconductance © 4.1 6.2 - S VCE = 100V, k: = 7.8A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1400 VGE = ov, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V k: = 4.0A
- 1.4 1.7 Ic = 4.0A, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 23 35 Ic = 7.8A
Qge Gate - Emitter Charge (turn-on) - 4.0 6.0 nC Vcc = 400V
Qgc Gate - Collector Charge (turn-on) - 9.6 14 VGE = 15V
tdion) Turn-On Delay Time - 17 - T: = 25''C
tr Rise Time - 20 - ns lc = 7.8A, Vcc = 480V
td(0ff) Turn-Off Delay Time - 160 240 l/GE = 15V, Rs = 75n
t; Fall Time - 83 120 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.24 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 0.26 - mJ
Ets Total Switching Loss - 0.50 0.63
td(on) Turn-On Delay Time - 16 - T: = 150°C,
tr Rise Time - 21 - ns Ic = 7.8A, Vcc = 480V
tam) Turn-Off Delay Time - 180 - VGE = 15V, Rs = 75n
tr Fall Time - 220 - Energy losses include "tail" and
Ets Total Switching Loss - 0.76 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 410 - VGE = 0V
Coes Output Capacitance - 37 - pF Vcc = 30V
Ores Reverse Transfer Capacitance - 5.3 - f = 1.0MHz
trr Diode Reverse Recovery Time - 28 42 ns To = 25°C
- 38 57 To = 125°C IF = 4.0A
|rr Diode Peak Reverse Recovery Current - 2.9 5.2 A To = 25°C
- 3.7 6.7 To = 125''C VR = 200V
Qrr Diode Reverse Recovery Charge - 40 60 nC T J = 25°C
- 70 110 TJ = 125°C di/dt 200Alps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps To = 25°C
During tb - 240 - To = 125°C
