IRG4BC10UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures CES UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz i ..
IRG4BC15UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageapplications• Compatible with high voltage Gate Driver IC's• Allows simpler gate driveTO-220ABAbsol ..
IRG4BC15UD-S ,600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak packageapplications Compatible with high voltage Gate Driver IC's Allows simpler gate drive2D PakTO-26 ..
IRG4BC15UD-SPBF ,600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak packageapplications• Compatible with high voltage Gate Driver IC's• Allows simpler gate drive2D PakTO-262I ..
IRG4BC20F ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB packageFeatures C Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
IRG4BC20F ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
ISO-130U ,Brown Corporation - High IMR, Low Cost ISOLATION AMPLIFIER
ISO130UB ,Brown Corporation - High IMR, Low Cost ISOLATION AMPLIFIER
ISO150AUG4 ,Dual, Isolated, Bi-Directional Digital Coupler 12-SOP -40 to 85
ISO1540DR ,2.5 kVrms Isolated Bidirectional Clock, Bidirectional I2C Isolators 8-SOIC -40 to 125Features 3 Description2The ISO1540 and ISO1541 devices are low-power,1• Isolated Bidirectional, I C ..
ISO15DW ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85FEATURES From: 4000-V 560-V V per IEC....Rev 2) To: 4000-V V , 560-V V ,peak peak IORM PK IOTM PK I ..
ISO15DWR ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO15 is an isolated half-duplex differential line1• Meets or Exceeds TIA ..
IRG4BC10UD
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
International PD91677B
TOR Rectifier |RG4BC1OUD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFastCoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features VCES = 600V
. UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in VCE(on)typ. = 2.15V
resonant mode
. Generation 4 IGBT design provides tighter G - -
parameter distribution and higher efficiency than @VGE - 15V, k: - 5.0A
previous Generation E
. IGBT co-packaged with HEXFREDTM ultrafast, n- h nnel tdtyp.) = 140ns
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
. Industry standard TO-220AB package
Benefits
. Generation 4 IGBT's offer highest efMiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 8.5
lc @ Tc = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector Current (O 34 A
u, Clamped Inductive Load Current © 34
IF @ Tc = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
VGE Gate-to-Emitter Voltage , 20 V
Po @ Tc = 25°C Maximum Power Dissipation 38
Pro @ Tc = 100°C Maximum Power Dissipation 15
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibfoin (1.1 tom)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 3.3
Rac Junction-to-Case - Diode - - 7.0 °CNV
Ras Case-to-Sink, flat, greased surface - 0.50 -
Ram Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2 (0.07) - g (oz)
1
12/30/00
International
IRG4BC10UD TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltage© 600 - - V VGE = 0V, k: = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.54 - V/°C VGE = 0V, k: = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 2.15 2.6 lc = 5.0A VGE = 15V
- 2.61 - V k: = 8.5A See Fig. 2, 5
- 2.30 - Ic = 5.0A, Tu = 150°C
VGE(1h) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -8.7 - mV/°C VCE = VGE, lc = 250pA
git Forward Transconductance © 2.8 4.2 - S VCE = 100V, IC = 5.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V Ic = 4.0A See Fig. 13
- 1.4 1.7 Ic = 4.0A, To = 125°C
IGEs Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ch Total Gate Charge (turn-on) - 15 22 Ic = 5.0A
Qge Gate - Emitter Charge (turn-on) - 2.6 4.0 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 5.8 8.7 VGE = 15V
tum...) Turn-On Delay Time - 40 - T: = 25°C
tr RiseTime - 16 - ns Ic = 5.0A, Vcc = 480V
tam) Turn-Off Delay Time - 87 130 VGE = 15V, Rs = 100n
tr FaIITime - 140 210 Energy losses include "tail" and
EI] Turn-On Switching Loss - 0.14 - diode reverse recovery.
El,, Turn-Off Switching Loss - 0.12 - mJ See Fig. 9, 10, 18
EU Total Switching Loss - 0.26 0.33
lawn) Turn-On Delay Time - 38 - TJ = 150°C, See Fig. 11, 18
tr RiseTime - 18 - ns k: = 5.0A, Vcc = 480V
trs(ott) Turn-Off Delay Time - 95 - VGE = 15V, RG = 100n
tr FaIITime - 250 - Energy losses include "tail" and
EU Total Switching Loss - 0.45 - ntl diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 270 - VGE = 0V
Cass Output Capacitance - 21 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 3.5 - f = 1.0MHz
trr Diode Reverse Recovery Time - 28 42 ns To = 25''C See Fig.
- 38 57 To = 125°C 14 IF = 4.0A
I,T Diode Peak Reverse Recovery Current - 2.9 5.2 A To = 25°C See Fig.
- 3.7 6.7 TJ = 125°C 15 VR = 200V
Q,, Diode Reverse Recovery Charge - 40 60 nC TJ = 25°C See Fig.
- 70 105 TJ = 125°C 16 di/dt = 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps To = 25''C See Fig.
During tr, - 235 - To = 125°C 17
Details of note (D through © are on the last page
